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quality Power MOSFET PJSEMI PJM08C30PA N Channel and P Channel Complementary Device for Electronic Circuits factory
quality Power MOSFET PJSEMI PJM08C30PA N Channel and P Channel Complementary Device for Electronic Circuits factory

Power MOSFET PJSEMI PJM08C30PA N Channel and P Channel Complementary Device for Electronic Circuits

Key Attributes
Model Number: PJM08C30PA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
31mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.4V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
54pF;65pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
485.8pF;650pF
Output Capacitance(Coss):
65.2pF;105pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
12.6nC@10V;12.5nC@10V
Mfr. Part #:
PJM08C30PA
Package:
SOP-8
Product Description

Product Overview

The PJM08C30PA is a N and P-Channel Complementary Power MOSFET designed for power management applications. It offers low on-resistance, low input capacitance, and fast switching speeds, making it suitable for various electronic circuits requiring efficient power control.

Product Attributes

  • Brand: Pingjing Semiconductor
  • Model: PJM08C30PA
  • Package: SOP-8
  • Revision: 3.0
  • Date: Oct-2022

Technical Specifications

ParameterSymbolN-Channel Min.N-Channel Typ.N-Channel Max.N-Channel UnitP-Channel Min.P-Channel Typ.P-Channel Max.P-Channel Unit
Drain-Source VoltageVDS30--V-30--V
Gate-Source VoltageVGS--±20V--±20V
Drain Current-ContinuousID8--A-7--A
Drain Current-PulsedIDM20--A-20--A
Maximum Power DissipationPD--2W--2W
Junction TemperatureTJ--150°C--150°C
Storage Temperature RangeTSTG-55-+150°C-55-+150°C
Thermal Resistance,Junction-to-AmbientRθJA--62.5°C/W--62.5°C/W
Drain-Source Breakdown VoltageV(BR)DSS30--V---V
Zero Gate Voltage Drain CurrentIDSS--1μA--1μA
Gate-Body Leakage CurrentIGSS--±100nA--±100nA
Gate Threshold VoltageVGS(th)1.21.62.4V-1.43V
Drain-Source On-ResistanceRDS(on)-2531mΩ-4860mΩ
Forward TransconductancegFS-15-S5.5--S
Input CapacitanceCiss-485.8-pF-650-pF
Output CapacitanceCoss-65.2-pF-105-pF
Reverse Transfer CapacitanceCrss-54-pF-65-pF
Turn-on Delay Timetd(on)-5-nS-8.5-nS
Turn-on Rise Timetr-3-nS-4.5-nS
Turn-off Delay Timetd(off)-15-nS-26-nS
Turn-off Fall Timetf-3.5-nS-12.5-nS
Total Gate ChargeQg-12.6-nC-12.5-nC
Gate-Source ChargeQgs-1.9-nC-2.8-nC
Gate-Drain ChargeQg d-2.6-nC-2.7-nC
Diode Forward VoltageVSD--1.2V--1.2V
Diode Forward CurrentIS--5.8A--4.1A

2409302200_PJSEMI-PJM08C30PA_C5445031.pdf

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