High reliability dual digital transistor ROHM EMG3T2R with 50 volt collector emitter voltage rating
Key Attributes
Model Number:
EMG3T2R
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
EMG3T2R
Package:
SOT-553-5
Product Description
Product Overview
The EMG3 / UMG3N / FMG3A are common dual digital transistors designed for inverter, interface, and driver applications. These devices offer the advantage of reduced mounting cost and area by integrating two DTC143T chips within a single SOT-553 (EMT5), SOT-353 (UMT5), or SOT-25 (SMT5) package. They provide reliable performance with a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 100mA.
Product Attributes
- Brand: ROHM
- Type: Dual Digital Transistor
Technical Specifications
| Model | Package | Package Size (mm) | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMG3 | SOT-553 (EMT5) | 1616 | T2R | 180 | 8 | 8000 | G3 |
| UMG3N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | G3 |
| FMG3A | SOT-25 (SMT5) | 2928 | T148 | 180 | 8 | 3000 | G3 |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Values | Unit |
|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Power dissipation (EMG3/UMG3N) | PD*1*2 | 150 (Total) | mW |
| Power dissipation (FMG3A) | PD*1*3 | 300 | mW |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 |
Electrical Characteristics (Ta = 25C)
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector-base breakdown voltage | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | IE = 50A | 5 | - | - | V |
| Collector cut-off current | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | VEB = 4V | - | - | 500 | nA |
| Collector-emitter saturation voltage | IC = 5mA, IB = 0.25mA | - | - | 300 | mV |
| DC current gain | VCE = 5V, IC = 1mA | 100 | 250 | 600 | - |
| Input resistance R1 | - | 3.29 | 4.7 | 6.11 | k |
| Transition frequency | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
2201121900_ROHM-EMG3T2R_C2941610.pdf
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