400V N Channel MOSFET PIP PTA10N40B Featuring Low Gate Charge and Fast Recovery Diode for Power Electronics
Key Attributes
Model Number:
PTA10N40B
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
450mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
20pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
40W
Gate Charge(Qg):
-
Mfr. Part #:
PTA10N40B
Package:
TO-220F
Product Description
Product Overview
The PTP10N40B and PTA10N40B are 400V N-Channel MOSFETs featuring proprietary new planar technology. They offer low gate charge for minimized switching loss and a fast recovery body diode. These MOSFETs are suitable for applications such as ballasts, lighting, DC-AC inverters, and other general applications.
Product Attributes
- Brand: PIP
- Origin: Perfect Intelligent Power Semiconductor Co., Ltd.
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) @ Tc=25 (A) | RDS(ON),typ. @ VGS=10V () | Gate Threshold Voltage (VGS(TH)) (V) | Total Gate Charge (Qg) (nC) | Reverse recovery time (trr) (ns) | Thermal Resistance, Junction-to-Case (RJC) (/W) |
| PTP10N40B | TO-220 | 400 | 10 | 0.45 | 2.0 - 4.0 | 20 | 330 | 0.925 |
| PTA10N40B | TO-220F | 400 | 10 | 0.45 | 2.0 - 4.0 | 20 | 330 | 3.125 |
2410121448_PIP-PTA10N40B_C575804.pdf
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