High voltage silicon carbide fet Qorvo UJ4C075033B7S featuring cascode technology and low gate charge
Product Overview
The UJ4C075033B7S is a 750V, 33mW G4 SiC FET designed for high-performance switching applications. It features a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This device offers standard gate-drive characteristics, enabling it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Key advantages include ultra-low gate charge (QG = 37.8nC), exceptional reverse recovery characteristics (Qrr = 62nC), and low on-resistance (RDS(on) = 33mW). The UJ4C075033B7S is available in a D2PAK-7L package, ideal for applications requiring faster switching and clean gate waveforms. Typical applications include power factor correction modules, motor drives, induction heating, switch mode power supplies, and EV charging and PV inverters.
Product Attributes
- Brand: UnitedSiC (implied by website reference)
- Material: Silicon Carbide (SiC) FET
- Package: D2PAK-7L
- Technology: G4 SiC FET
- Configuration: Cascode (SiC JFET + Si MOSFET)
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Drain-source breakdown voltage | BVDS | VGS=0V, ID=1mA | 750 | V |
| Drain-source on-resistance | RDS(on) | VGS=12V, ID=30A, TJ=25C | 33 | mW (typ) |
| Drain-source on-resistance | RDS(on) | VGS=12V, ID=30A, TJ=175C | 41 | mW (typ) |
| Gate threshold voltage | VG(th) | VDS=5V, ID=10mA | 4.8 | V (typ) |
| Total gate charge | QG | VDS=400V, ID=30A, VGS = 0V to 15V | 37.8 | nC |
| Reverse recovery charge | Qrr | VR=400V, IS=30A, VGS=0V, RG_EXT=50W, di/dt=1100A/ms, TJ=150C | 62 | nC |
| Diode continuous forward current | ID | TC = 25C | 44 | A |
| Pulsed drain current | IDM | TC = 25C | 140 | A |
| Single pulsed avalanche energy | EAS | L=15mH, IAS =2.4A, Starting TJ = 25C | 43 | mJ |
| Power dissipation | Ptot | TC = 25C | 197 | W |
| Maximum junction temperature | TJ,max | - | 175 | C |
| Operating and storage temperature | TJ, TSTG | - | -55 to 175 | C |
| Thermal resistance, junction-to-case | RqJC | - | 0.58 - 0.76 | C/W |
| Input capacitance | Ciss | VDS=400V, VGS=0V, f=100kHz | 1400 | pF |
| Output capacitance | Coss | VDS=400V, VGS=0V, f=100kHz | 68 | pF |
| Reverse transfer capacitance | Crss | VDS=400V, VGS=0V, f=100kHz | 2.5 | pF |
2411261457_Qorvo-UJ4C075033B7S_C7407139.pdf
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