Built in bias resistor PNP digital transistor ROHM DTA043EEBTL designed for inverter and driver circuit applications

Key Attributes
Model Number: DTA043EEBTL
Product Custom Attributes
Output Voltage(VO(on)):
150mV
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA043EEBTL
Package:
SOT-416
Product Description

Product Overview

The DTA043E series is a PNP digital transistor with built-in bias resistors (R1 = R2 = 4.7k). This integration simplifies circuit design by eliminating the need for external input resistors, enabling straightforward configuration of inverter circuits. Designed for ease of use, only on/off conditions need to be set for operation. It is suitable for applications such as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC043E series.

Product Attributes

  • Brand: ROHM
  • Product Type: Digital Transistor (Bias Resistor Built-in Transistor)
  • Polarity: PNP

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking VCC (MAX.) IC(MAX.) R1 R2
DTA043EM SOT-723 (VMT3) 1212 T2L 180 8 8000 37 -50V -100mA 4.7k 4.7k
DTA043EEB SOT-416FL (EMT3F) 1616 TL 180 8 3000 37 -50V -100mA 4.7k 4.7k
DTA043EUB SOT-323FL (UMT3F) 2021 TL 180 8 3000 37 -50V -100mA 4.7k 4.7k
Parameter Symbol Conditions Min. Typ. Max. Unit
Supply voltage VCC -50 V
Input voltage VIN -30 to 10 V
Output current IO -100 mA
Collector current IC(MAX)*1 -100 mA
Power dissipation PD*2 DTA043EM 150 mW
DTA043EEB 150 mW
DTA043EUB 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Input voltage (OFF) VI(off) VCC = -5V, IO = -100A - - -0.5 V
Input voltage (ON) VI(on) VO = -0.3V, IO = -5mA -2.2 - - V
Output voltage (ON) VO(on) IO = -5mA, II = -0.5mA - -70 -150 mV
Input current II VI = -5V - - -1.8 mA
Output current (OFF) IO(off) VCC = -50V, VI = 0V - - -500 nA
DC current gain GI VO = -10V, IO = -5mA 20 - - -
Input resistance R1 - 3.29 6.11 k
Resistance ratio R2/R1 - 0.8 1.2 -
Transition frequency fT*1 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz

2109190430_ROHM-DTA043EEBTL_C509862.pdf
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