N Channel Enhancement Mode Power MOSFET PJSEMI PJMG10H25NDL with 100V VDS and 24A Continuous Current
Key Attributes
Model Number:
PJMG10H25NDL
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
24A
RDS(on):
26mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Input Capacitance(Ciss):
660pF
Pd - Power Dissipation:
25W
Output Capacitance(Coss):
375pF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
PJMG10H25NDL
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The PJMG10H25NDL is an N-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced Split Gate Trench Technology, 100% avalanche testing, and is RoHS compliant, halogen and antimony free. This MOSFET offers a VDS of 100V and a continuous ID of 24A with low RDS(on) values.
Product Attributes
- Brand: PingJingSemi
- Model: PJMG10H25NDL
- Technology: Advanced Split Gate Trench
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
- Marking Code: 10H25NG YW
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDS | 100 | V | |||
| VGS | ±20 | V | ||||
| ID | TC=25°C | 24 | A | |||
| TC=100°C | 15 | A | ||||
| IDM | Note1 | 96 | A | |||
| EAS | Note2 | 27.6 | mJ | |||
| PD | 25 | W | ||||
| Electrical Characteristics | V(BR)DSS | VGS=0V,ID=250µA | 100 | -- | -- | V |
| IDSS | VDS=100V,VGS=0V | -- | -- | 1 | µA | |
| IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA | |
| VGS(th) | VDS=VGS,ID=250µA | 1 | -- | 2.5 | V | |
| RDS(on) | VGS=10V,ID=10A | -- | -- | 26 | mΩ | |
| VGS=4.5V,ID=8A | -- | -- | 33 | mΩ | ||
| Dynamic Characteristics | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 660 | -- | pF |
| Coss | -- | 375 | -- | pF | ||
| Crss | -- | 21 | -- | pF | ||
| Switching Characteristics | td(on) | VDD=50V, ID=10A, VGS=10V, RGEN=3Ω | -- | 14 | -- | nS |
| tr | -- | 12 | -- | nS | ||
| td(off) | -- | 23 | -- | nS | ||
| tf | -- | 6 | -- | nS | ||
| Source-Drain Diode Characteristics | VSD | VGS=0V,IS=24A | -- | -- | 1.2 | V |
| IS | -- | -- | 24 | A |
2510141655_PJSEMI-PJMG10H25NDL_C52117971.pdf
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