86--136 6733 2386
quality NPN digital transistor ROHM DTD123TKT146 featuring integrated thin film resistors for inverter and driver circuit factory
quality NPN digital transistor ROHM DTD123TKT146 featuring integrated thin film resistors for inverter and driver circuit factory

NPN digital transistor ROHM DTD123TKT146 featuring integrated thin film resistors for inverter and driver circuit

Key Attributes
Model Number: DTD123TKT146
Product Custom Attributes
Current - Collector Cutoff:
500nA
DC Current Gain:
100@50mA,5V
Emitter-Base Voltage VEBO:
5V
Operating Temperature:
-55℃~+150℃
Current - Collector(Ic):
500mA
Type:
NPN
Transition Frequency(fT):
200MHz
Input Resistor:
2.2kΩ
Vce Saturation(VCE(sat)):
300mV@2.5mA,50mA
Number:
1 NPN (Pre-Biased)
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
DTD123TKT146
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The ROHM DTD123TK is an NPN digital transistor featuring built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. This configuration enables easy setup of inverter circuits, with the integrated thin-film resistors offering complete isolation for negative input biasing and the elimination of parasitic effects. Designed for ease of operation, requiring only on/off condition settings, it is suitable for switching, inverter, interface, and driver circuit applications. Complementary PNP type is DTB123TK. This product is Lead Free and RoHS Compliant.

Product Attributes

  • Brand: ROHM
  • Compliance: Lead Free/RoHS Compliant
  • Origin: Japan (implied by ROHM Co., Ltd. 2012)

Technical Specifications

Parameter Symbol Conditions Value Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 40 V
Emitter-base voltage VEBO 5 V
Collector current IC 500 mA
Power dissipation Pd (*2 Each terminal mounted on a reference footprint) 200 mW
Junction temperature Tj 150 C
Range of storage temperature Tstg -55 to +150 C
DC current gain hFE VCE= 5V , IC= 50mA 2.2 k
Transition frequency fT *1 VCE = 10V, IE = -50mA, f = 100MHz 250 MHz
Emitter cut-off current IEBO VEB = 4V 0.5 A
Collector-emitter saturation voltage VCE(sat) IC / IB= 50mA / 2.5mA 0.3 V
Emitter-base resistance R IC= 1mA 2.2 k
Emitter-base breakdown voltage BVEBO IE= 50mA 5 V
Collector cut-off current ICBO VCB = 50V 0.5 mA
Collector-emitter breakdown voltage BVCEO IC= 50mA 40 V
Collector-base breakdown voltage BVCBO IC= 50mA 50 V
Part No. Package Package size (mm) Taping code Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Marking
DTD123TK SOT-346 (SC-59) 2.80 x 1.50 (approximate based on dimension table) T146 180 8 3,000 F02
Dimension MIN MAX MIN MAX
MILIMETERS MILIMETERS INCHES INCHES
A 1.00 1.30 0.051 0.051
A1 0.00 0.10 0 0.004
A3
b 0.35 0.50 0.014 0.020
b2 0.60 0.024
c 0.09 0.25 0.004 0.010
D 2.80 3.00 0.110 0.118
E 1.50 1.80 0.059 0.071
e
e1 0.95 0.04
H 2.60 3.00 0.102 0.118
L1 0.30 0.60 0.012 0.024
Lp 0.40 0.70 0.016 0.028
Q 0.20 0.30 0.008 0.012
x 0.10 0.004
y 0.10 0.004
l1 0.90 0.035

2212230930_ROHM-DTD123TKT146_C5336523.pdf

Related Products
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.