SOT23 3 Package MOSFET PJSEMI PJM2302NSC Offering Low On Resistance and Power Switching Performance
Key Attributes
Model Number:
PJM2302NSC
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
PJM2302NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM2302NSC is an N-Channel Enhancement Mode Power MOSFET designed for power switching applications and power management. It features fast switching, low gate charge, low RDS(on), and high power and current handling capability. Key specifications include VDS= 20V, ID= 4A, and RDS(on)< 40m @VGS= 4.5V.
Product Attributes
- Brand: Pingjing Semiconductor (implied by www.pingjingsemi.com)
- Product Code: PJM2302NSC
- Package Type: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.5 | 0.8 | 1.2 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=3A | -- | 23 | 40 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=2.5V,ID=2.8A | -- | 30 | 55 | m |
| Forward Transconductance | gFS | VDS=5V,ID=1A | -- | 5 | -- | S |
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 300 | -- | pF |
| Output Capacitance | Coss | -- | 120 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 80 | -- | pF | |
| Turn-on Delay Time | td(on) | VDD=10V, ID=3A, VGS=4.5V,RGEN=6 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 50 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 17 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10 | -- | nS | |
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=4.5V | -- | 4 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.7 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 1.5 | -- | nC | |
| Diode Forward Voltage | VSD | VGS=0V,IS=4A | -- | 0.75 | 1.2 | V |
| Diode Forward Current | IS | -- | -- | 4 | A | |
| Drain-Source Voltage (Continuous) | ID | Ratings at 25 ambient temperature unless otherwise specified. | -- | -- | 4 | A |
| Drain-Source Voltage (Pulsed) | IDM | Note1 | -- | -- | 20 | A |
| Maximum Power Dissipation | PD | -- | -- | 1.25 | W | |
| Junction Temperature | TJ | -- | -- | 150 | ||
| Storage Temperature Range | TSTG | -55 | -- | +150 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | Note2 | -- | 100 | -- | /W |
2411121111_PJSEMI-PJM2302NSC_C41413545.pdf
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