load switching MOSFET PJSEMI PJM09P20DF P Channel Enhancement Mode with 20V VDS and low gate charge
Key Attributes
Model Number:
PJM09P20DF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
37mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
168pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.2nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
33.7nC@4.5V
Mfr. Part #:
PJM09P20DF
Package:
DFN2x2-6L
Product Description
Product Overview
The PJM09P20DF is a P-Channel Enhancement Mode Power MOSFET designed for efficient load switching and power management applications. It features low gate charge and low RDS(ON), offering advantages in PWM applications. This MOSFET operates with a VDS of -20V and an ID of -9A, with RDS(on) as low as 26m at VGS=-4.5V.
Product Attributes
- Brand: PingJingSemi
- Product Code: PJM09P20DF
- Package Type: DFN2x2-6L
- Marking Code: 09P20
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 0.4 | 0.7 | 1.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-7A | -- | -- | 26 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-2.5V,ID=-5.6A | -- | -- | 37 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-2A | -- | 8 | -- | S |
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 1200 | -- | pF |
| Output Capacitance | Coss | VDS=-10V,VGS=0V,f=1MHz | -- | 191 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V,f=1MHz | -- | 168 | -- | pF |
| Turn-on Delay Time | td(on) | VDS=-10V, ID=-5A VGEN=-4.5V,RG=10 | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | VDS=-10V, ID=-5A VGEN=-4.5V,RG=10 | -- | 35 | -- | nS |
| Turn-off Delay Time | td(off) | VDS=-10V, ID=-5A VGEN=-4.5V,RG=10 | -- | 30 | -- | nS |
| Turn-off Fall Time | tf | VDS=-10V, ID=-5A VGEN=-4.5V,RG=10 | -- | 10 | -- | nS |
| Total Gate Charge | Qg | VDS=-10V,ID=-5A, VGS=-4.5V | -- | 33.7 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-10V,ID=-5A, VGS=-4.5V | -- | 3.5 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-10V,ID=-5A, VGS=-4.5V | -- | 10.5 | -- | nC |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-9A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | VGS=0V,IS=-9A | -- | -- | 9 | A |
2406251628_PJSEMI-PJM09P20DF_C22470325.pdf
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