Power Management P Channel MOSFET PJSEMI PJM2309PSA with Halogen Free and Low On Resistance Features
Key Attributes
Model Number:
PJM2309PSA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
200mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
28pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
850pF@30V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
PJM2309PSA
Package:
SOT-23
Product Description
Product Overview
The PJM2309PSA is a P-Channel Power MOSFET designed for efficient power management applications. It features a -60V drain-source voltage, -2.0A continuous drain current, and a low on-resistance of 200m (max) at -10V. This device is halogen and antimony-free, making it suitable for environmentally conscious designs. Its applications include load switching and PWM applications.
Product Attributes
- Brand: PingJing
- Certifications: Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | -ID | 2 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RθJA | 89 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | -V(BR)DSS | VGS = 0V, ID=-250µA | 60 | V | ||
| Drain to Source Leakage Current | -IDSS | VDS =-60V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | -VGS(th) | VDS =VGS, ID =-250µA | 1.5 | 3 | V | |
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-2A | 200 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-1A | 400 | mΩ | ||
| Forward transconductance | gFS | VDS =-5V, ID =-2A | 6 | S | ||
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | VDS = -30V,VGS = 0V,f=1MHz | 850 | pF | ||
| Output Capacitance | Coss | 65 | pF | |||
| Reverse Transfer Capacitance | Crss | 28 | pF | |||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | ID=-1AVDD=-30V, VGS=-10VRGEN =3Ω, RL =7.5Ω | 7 | ns | ||
| Turn-on rise time | tr | 3 | ns | |||
| Turn-off delay time | td(off) | 28 | ns | |||
| Turn-off fall time | tf | ns | ||||
| Total gate charge | Qg | VDD =-30V,VGS =-10V,ID =-2A | 5.5 | nC | ||
| Gate-source charge | Qgs | 2.5 | nC | |||
| Gate-drain charge | Qg d | 6 | nC | |||
| Source-Drain Diode characteristics | ||||||
| Diode Forward voltage | -VSD | VGS =0V, IS=-2A | 1.2 | V | ||
| Continuous Source-Drain Diode Current | -IS | A | ||||
2410010131_PJSEMI-PJM2309PSA_C411721.pdf
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