N Channel Enhancement Mode MOSFET PJSEMI PJM2306NSA designed for load switching and power management
Key Attributes
Model Number:
PJM2306NSA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
RDS(on):
47mΩ@10V,3.5A
Reverse Transfer Capacitance (Crss@Vds):
17pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
230pF@15V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
4nC@10V
Mfr. Part #:
PJM2306NSA
Package:
SOT-23-3
Product Description
Product Overview
The PJM2306NSA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications like PWM, load switching, and power management. The device comes in a compact SOT-23 package.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 3.5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 0.7 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 179 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 1 | 1.5 | 3 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=3.5A | -- | 38 | 47 | m |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=2.8A | -- | 52 | 65 | m |
| Forward Transconductance | gFS | Note3,VDS=4.5V,ID=2.5A | -- | 7 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 230 | -- | pF |
| Output Capacitance | Coss | -- | 40 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 17 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=3.5A,VGS=4.5V,RGEN=6 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 50 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 10 | -- | nS | |
| Turn-off Fall Time | tf | -- | 20 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=15V,ID=3.5A,VGS=10V | -- | 4 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.75 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 0.65 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=3.5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 3.5 | A |
2412311540_PJSEMI-PJM2306NSA_C42431772.pdf
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