Built in Bias Resistor NPN Digital Transistor ROHM DTC123EE3TL for Inverter and Driver Applications

Key Attributes
Model Number: DTC123EE3TL
Product Custom Attributes
DC Current Gain:
20@20mA,5V
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Mfr. Part #:
DTC123EE3TL
Product Description

Product Overview

The DTC123E series is a line of NPN digital transistors featuring built-in bias resistors (R1 = R2 = 2.2k) for simplified inverter circuit configuration without external input resistors. These transistors are designed for easy circuit design, requiring only the setting of on/off conditions for operation. They are suitable for applications such as inverters, interfaces, and drivers. Complementary PNP types, the DTA123E series, are also available.

Product Attributes

  • Brand: ROHM
  • Product Type: NPN Digital Transistor (Bias Resistor Built-in)

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Quantity (pcs) Marking VCC (MAX) IC(MAX) R1 R2
DTC123EM SOT-723 1212 T2L 180 8 8000 22 50V 100mA 2.2k 2.2k
DTC123EEB SOT-416FL 1616 TL 180 8 3000 22 50V 100mA 2.2k 2.2k
DTC123EE3 SOT-416 1616 TL 180 8 3000 22 50V 100mA 2.2k 2.2k
DTC123EUB SOT-323FL 2021 TL 180 8 3000 22 50V 100mA 2.2k 2.2k
DTC123EU3 SOT-323 2021 T106 180 8 3000 22 50V 100mA 2.2k 2.2k
DTC123EKA SOT-346 2928 T146 180 8 3000 22 50V 100mA 2.2k 2.2k
Parameter Symbol Conditions Value Unit
Supply voltage VCC 50 V
Input voltage VIN -10 to 12 V
Output current IO 100 mA
Collector current (MAX) IC(MAX)*1 100 mA
Power dissipation PD*2 DTC123EM 150 mW
Power dissipation PD*2 DTC123EEB 150 mW
Power dissipation PD*2 DTC123EE3 150 mW
Power dissipation PD*2 DTC123EUB 200 mW
Power dissipation PD*2 DTC123EU3 200 mW
Power dissipation PD*2 DTC123EKA 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Input voltage (VI(off)) VI(off) VCC = 5V, IO = 100A - V
Input voltage (VI(on)) VI(on) VO = 0.3V, IO = 20mA 3.0 -
Output voltage (VO(on)) VO(on) IO = 10mA, II = 0.5mA 100 mV
Input current II VI = 5V 3.8 mA
Output current (IO(off)) IO(off) VCC = 50V, VI = 0V 500 nA
DC current gain GI VO = 5V, IO = 20mA 20 -
Input resistance R1 1.54 to 2.86 k
Resistance ratio R2/R1 0.8 to 1.2 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz 250 MHz

2401251540_ROHM-DTC123EE3TL_C20108233.pdf

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