PJSEMI PJM4601DPSG S Dual P Channel MOSFET for Power Management Load Switching and Battery Protection
Key Attributes
Model Number:
PJM4601DPSG-S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
2 P-Channel
Output Capacitance(Coss):
75pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
405pF@10V
Gate Charge(Qg):
2.9nC@4.5V
Mfr. Part #:
PJM4601DPSG-S
Package:
SOT-23-6
Product Description
Product Overview
The PJM4601DPSG-S is a Dual P-Channel Enhancement Mode Power MOSFET designed for surface mounting. It offers high power and current handling capabilities, making it suitable for load switching, battery protection, and power management applications. This component is halogen and antimony-free.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23-6
- Certifications: Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 0.4 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-2A | -- | 100 | 120 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-2.5V,ID=-1A | -- | 140 | 180 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-1A | -- | 4 | -- | S |
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 405 | -- | pF |
| Output Capacitance | Coss | VDS=-10V,VGS=0V,f=1MHz | -- | 75 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V,f=1MHz | -- | 55 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=-10V, ID=-1A VGS=-4.5V,RGEN=1 | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | VDD=-10V, ID=-1A VGS=-4.5V,RGEN=1 | -- | 35 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-10V, ID=-1A VGS=-4.5V,RGEN=1 | -- | 30 | -- | nS |
| Turn-off Fall Time | tf | VDD=-10V, ID=-1A VGS=-4.5V,RGEN=1 | -- | 10 | -- | nS |
| Total Gate Charge | Qg | VDS=-10V,ID=-2A, VGS=-4.5V | -- | 2.9 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-10V,ID=-2A, VGS=-4.5V | -- | 0.45 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=-10V,ID=-2A, VGS=-4.5V | -- | 0.75 | -- | nC |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-2A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | VGS=0V,IS=-2A | -- | -- | 2 | A |
2411121111_PJSEMI-PJM4601DPSG-S_C41413544.pdf
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