Schottky Barrier Rectifier R O SB10100L Surface Mount Device for Low Voltage High Frequency Circuits
Key Attributes
Model Number:
SB10100L
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
100uA@100V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - Forward(Vf@If):
700mV@10A
Current - Rectified:
10A
Mfr. Part #:
SB10100L
Package:
TO-277
Product Description
SB10100L SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
The SB10100L is a high-efficiency surface mount Schottky barrier rectifier designed for low voltage, high frequency applications. It features ultra-low forward voltage drop and low power losses due to its metal silicon junction and majority carrier conduction. This rectifier offers high forward surge current capability and meets MSL level 1 standards. It is ideal for use in inverters, free wheeling circuits, and polarity protection applications.
Product Attributes
- Brand: Zhuhai Hongjiacheng Technology co., Ltd
- Origin: Zhuhai
- Case: TO-277
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding compound: Meets UL 94V-0 flammability rating, RoHS-compliant, halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | SB10100L |
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 100 | |
| Maximum RMS Voltage | VRMS | V | 70 | |
| Maximum DC Blocking Voltage | VDC | V | 100 | |
| Maximum Average Forward Rectified Current @60Hz sinewave, Resistance load,TL (Fig.1) | IF(AV) | A | 10 | |
| Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine wave | IFSM | A | 150 | |
| Storage Temperature | Tstg | -55 ~ +150 | ||
| Junction Temperature | Tj | -55 ~ +125 | ||
| Typical Thermal Resistance | RJ-A | /W | 60 | |
| Typical Thermal Resistance | RJ-L | /W | 16 | |
| Maximum instantaneous forward voltage | VF | IF=10A | V | 0.7 |
| Maximum DC reverse current at rated DC blocking voltage | IR1 | VR=VDC, TA=25 | mA | 0.1 |
| Maximum DC reverse current at rated DC blocking voltage | IR2 | VR=VDC, TA=100 | mA | 20 |
| Typical junction capacitance | CJ | 4.0V DC, 1MHz | pF | 500 |
2505151626_R-O-SB10100L_C7502745.pdf
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