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quality 300 Volt 12 Amp Q Series Diode Power Integrations LQA12B300C Common Cathode Rectifier factory
quality 300 Volt 12 Amp Q Series Diode Power Integrations LQA12B300C Common Cathode Rectifier factory

300 Volt 12 Amp Q Series Diode Power Integrations LQA12B300C Common Cathode Rectifier

Key Attributes
Model Number: LQA12B300C
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350A
Reverse Leakage Current (Ir):
25uA@300V
Voltage - DC Reverse (Vr) (Max):
300V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
1.9V@6A
Current - Rectified:
6A
Mfr. Part #:
LQA12B300C
Package:
TO-263AB
Product Description

Product Overview

The LQA12T300C and LQA12B300C are Qspeed Family 300 V, 12 A Q-Series Common-Cathode Diodes. These diodes offer the lowest QRR of any 300 V Silicon diode, leading to increased efficiency, reduced EMI, and elimination of snubbers. They are suitable for AC/DC and DC/DC output rectification, output and freewheeling diodes, motor drive circuits, and DC-AC inverters. Key features include low QRR, low IRRM, low tRR, high dIF/dt capability, and soft recovery, enabling increased efficiency, elimination of snubber circuits, reduced EMI filter size and count, and extremely fast switching.

Product Attributes

  • Brand: Qspeed
  • Family: Q-Series
  • Certifications: RoHS Compliant, Halogen free per IEC 61249-2-21
  • Package Material: Lead-free plating and Green mold compound

Technical Specifications

Part NumberIF(AVG) per diodeVRRMQRR (Typ at 125 C)IRRM (Typ at 125 C)Softness tb/ta (Typ at 125 C)Package
LQA12T300C6 A300 V27 nC1.87 A0.7TO-220AB
LQA12B300C6 A300 V27 nC1.87 A0.7TO-263AB
SymbolParameterConditionsRatingUnits
Absolute Maximum Ratings
VRRMPeak repetitive reverse voltage300V
IF(AVG)Average forward currentPer Diode, TJ = 150 C, TC = 117C6A
IF(AVG)Average forward currentPer Device, TJ = 150 C, TC = 117C12A
IFSMNon-repetitive peak surge currentPer Diode, 60 Hz, cycle37A
IFSMNon-repetitive peak surge currentPer Diode, cycle of t = 28 s Sinusoid, TC = 25 C350A
TJMaximum junction temperature150C
TSTGStorage temperature55 to 150C
Lead soldering temperatureLeads at 1.6mm from case, 10 sec300C
PDPower dissipationTC = 25 C33.8W
Thermal Resistance
RJAJunction to ambientTO-220AB (only)62C/W
RJCJunction to casePer Diode3.7C/W
RJCJunction to casePer Device1.9C/W
Electrical Specifications at TJ= 25 C (unless otherwise specified)
DC Characteristics per diode
IRReverse current per diodeVR = 300 V, TJ = 25 C25A
IRReverse current per diodeVR = 300 V, TJ = 125 C0.24mA
VFForward voltage per diodeIF = 6 A, TJ = 25 C1.6 - 1.9V
VFForward voltage per diodeIF = 6 A, TJ = 150 C1.34V
CJJunction capacitance per diodeVR = 10 V, 1 MHz19pF
Dynamic Characteristics per diode
tRRReverse recovery time, per diodedIF/dt =200 A/s, VR=200, IF=6 A, TJ=25 C11.5ns
tRRReverse recovery time, per diodedIF/dt =200 A/s, VR=200, IF=6 A, TJ=125 C21ns
QRRReverse recovery charge, per diodedIF/dt =200 A/s, VR=200, IF=6 A, TJ=25 C8.5 - 13nC
QRRReverse recovery charge, per diodedIF/dt =200 A/s, VR=200, IF=6 A, TJ =125 C27nC
IRRMMaximum reverse recovery current, per diodedIF/dt =200 A/s, VR=200, IF=6 A, TJ =25 C1.15 - 1.6A
IRRMMaximum reverse recovery current, per diodedIF/dt =200 A/s, VR=200, IF=6 A, TJ=125 C1.87A
SSoftness per diodedIF/dt =200 A/s, VR=200, IF=6 A, TJ =25 C0.7
SSoftness per diodedIF/dt =200 A/s, VR=200, IF=6 A, TJ=125 C0.7

2401161708_POWER-INTEGRATIONS-LQA12B300C_C568328.pdf

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