Silicon Carbide FET TO2474L Package UJ4C075044K4S 750V 44mW Optimized for Switch Mode Power Supplies

Key Attributes
Model Number: UJ4C075044K4S
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
37.4A
Type:
N-Channel
Pd - Power Dissipation:
203W
Mfr. Part #:
UJ4C075044K4S
Product Description

UnitedSiC UJ4C075044K4S 750V SiC FET

Product Overview
The UnitedSiC UJ4C075044K4S is a 750V, 44mW G4 Silicon Carbide (SiC) FET designed for high-performance power applications. This device utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics make it a direct 'drop-in replacement' for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075044K4S is available in a TO-247-4L package, offering ultra-low gate charge, exceptional reverse recovery characteristics, and low intrinsic capacitance. These features make it ideal for switching inductive loads and applications requiring standard gate drive, such as EV charging, switch-mode power supplies, and PV inverters.

Product Attributes

  • Brand: UnitedSiC
  • Material: Silicon Carbide (SiC) FET
  • Package Type: TO-247-4L

Technical Specifications

Parameter Test Conditions Value Units
Part Number UJ4C075044K4S
Drain-source breakdown voltage (BVDS) VGS=0V, ID=1mA 750 V
On-resistance (RDS(on)) VGS=12V, ID=25A, TJ=25C 44 mW
On-resistance (RDS(on)) VGS=12V, ID=25A, TJ=175C 56 mW
Gate threshold voltage (VG(th)) VDS=5V, ID=10mA 4.8 (typ) V
Total gate charge (QG) VDS=400V, ID=25A, VGS = 0V to 15V 37.8 nC
Continuous drain current (ID) TC = 25C 37.4 A
Pulsed drain current (IDM) TC = 25C 110 A
Power dissipation (Ptot) TC = 25C 203 W
Maximum junction temperature (TJ,max) 175 C
Operating and storage temperature (TJ, TSTG) -55 to 175 C
Reverse recovery charge (Qrr) VR=400V, IS=25A, VGS=0V, RG_EXT=5W, di/dt=1200A/ms, TJ=25C 72 nC
Reverse recovery charge (Qrr) VR=400V, IS=25A, VGS=0V, RG_EXT=5W, di/dt=1200A/ms, TJ=150C 93 nC
Forward voltage (VFSD) VGS=0V, IS=10A, TJ=25C 1.2 (typ) V
Input capacitance (Ciss) VDS=400V, VGS=0V, f=100kHz 1400 pF
Output capacitance (Coss) VDS=400V, VGS=0V, f=100kHz 55 pF
Reverse transfer capacitance (Crss) VDS=400V, VGS=0V, f=100kHz 2.5 pF
ESD protected HBM class 2 and CDM class C3
Typical Applications EV charging, Switch mode power supplies, PV inverters, Power factor correction modules, Motor drives, Induction heating

Typical Applications
- EV charging
- Switch mode power supplies
- PV inverters
- Power factor correction modules
- Motor drives
- Induction heating


2411272256_Qorvo-UJ4C075044K4S_C7407141.pdf
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