R plus O ES1G rectifier with low profile DO 214AC SMA case and halogen free RoHS compliant construction
Key Attributes
Model Number:
ES1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
2uA@400V
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
400V
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.3V@1A
Current - Rectified:
1A
Mfr. Part #:
ES1G
Package:
SMA(DO-214AC)
Product Description
Product Overview
The ES1A through ES1M series are surface mount fast recovery rectifiers designed for high-frequency rectification and freewheeling applications. They feature a low-profile package ideal for automated placement, glass-passivated chip junctions, and super fast reverse recovery times. These rectifiers offer low switching losses, high efficiency, and high forward surge capability, making them suitable for use in switching mode converters and inverters for consumer, computer, automotive, and telecommunication applications.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai Hongjiacheng Technology co., Ltd
- Case: DO-214AC(SMA)
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding compound meets UL 94V-0 flammability rating
- RoHS-compliant, halogen-free
Technical Specifications
| Parameter | Symbol | Unit | ES1A | ES1B | ES1C | ES1D | ES1F | ES1G | ES1H | ES1J | ES1K | ES1M |
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
| Maximum RMS Voltage | VRMS | V | 35 | 70 | 105 | 140 | 210 | 280 | 350 | 420 | 560 | 700 |
| Maximum DC blocking Voltage | VDC | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
| Maximum Average Forward Rectified Current @ 60Hz sinewave, Resistance load,TL (Fig.1) | IF(AV) | A | 1.0 | |||||||||
| Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine wave | IFSM | A | 30.0 | |||||||||
| Storage temperature | Tstg | -55 ~+150 | ||||||||||
| Junction temperature | Tj | -55 ~+150 | ||||||||||
| Typical Thermal Resistance (Junction to Ambient) | RJ-A | /W | 80 | |||||||||
| Typical Thermal Resistance (Junction to Lead) | RJ-L | /W | 35 | |||||||||
| Maximum instantaneous forward voltage @ IF=1.0A | VF | V | 1.0 | 1.3 | 1.7 | |||||||
| Maxinum reverse recovery time @ IF=0.5A,IR=1.0A,Irr=0.25A | Trr | ns | 35 | |||||||||
| Maximum DC reverse current @ VR=VDCTA=25 | IR1 | A | 2.0 | |||||||||
| Maximum DC reverse current @ VR=VDCTA=125 | IR2 | A | 200 | |||||||||
| Typical junction capacitance @ 4.0V DC,1MHz | CJ | pF | 18 | |||||||||
2506261420_R-O-ES1G_C18199138.pdf
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