ROHM UMD9NFHATR dual transistor AECQ101 qualified NPN and PNP in compact SOT363 package for inverter applications

Name: ROHM UMD9NFHATR dual transistor AECQ101 qualified NPN and PNP in compact SOT363 package for inverter applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: UMD9NFHATR
Availability: InStock

Key Attributes

Model Number: UMD9NFHATR

Product Custom Attributes

Output Voltage(VO(on)):

300mV

Input Resistor:

10kΩ

Resistor Ratio:

4.7

Number:

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

UMD9NFHATR

Package:

SOT-363

Product Description

Product Overview

The UMD9N FHA is a general-purpose dual digital transistor, AEC-Q101 qualified, designed for applications such as inverters, interfaces, and drivers. It features integrated NPN (DTr1) and PNP (DTr2) transistors within a single UMT6 package, offering advantages like reduced mounting cost and area, and independent transistor elements to eliminate interference. This product is compatible with UMT3 automatic mounting machines.

Product Attributes

Brand: ROHM
Certification: AEC-Q101 Qualified
Package Type: SOT-363 (UMT6)

Technical Specifications

Parameter	Symbol	DTr1 (NPN)	DTr2 (PNP)	Unit
Supply Voltage	VCC	50	-50	V
Maximum Collector Current	IC(MAX)	100	-100	mA
Internal Resistance R1	R1	10k	10k
Internal Resistance R2	R2	47k	47k

Absolute Maximum Ratings (Ta = 25C)

Parameter	Symbol	DTr1 (NPN)	DTr2 (PNP)	Unit
Supply Voltage	VCC	50	-50	V
Input Voltage	VIN	-6 to 40	-40 to 6	V
Output Current	IO	70	-70	mA
Collector Current (MAX)	IC(MAX)*1	100	-100	mA
Power Dissipation	PD23	150		mW/Total
Junction Temperature	Tj	150
Range of Storage Temperature	Tstg	-55 to +150

Electrical Characteristics (Ta = 25C) - DTr1 (NPN)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Input Voltage (OFF)	VI(off)	VCC = 5V, IO = 100A	-	-	0.3	V
Input Voltage (ON)	VI(on)	VO = 0.3V, IO = 1mA	1.4	-	-	V
Output Voltage (ON)	VO(on)	IO = 5mA, II = 0.25mA	-	100	300	mV
Input Current	II	VI = 5V	-	-	880	A
Output Current (OFF)	IO(off)	VCC = 50V, VI = 0V	-	-	500	nA
DC Current Gain	GI	VO = 5V, IO = 5mA	68	-	-	-
Input Resistance	R1		-	7	13	k
Resistance Ratio	R2/R1		-	4.7	5.7	-
Transition Frequency	fT*1	VCE = 10V, IE = -5mA, f = 100MHz	-	250	-	MHz

Electrical Characteristics (Ta = 25C) - DTr2 (PNP)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Input Voltage (OFF)	VI(off)	VCC = -5V, IO = -100A	-	-	-0.3	V
Input Voltage (ON)	VI(on)	VO = -0.3V, IO = -1mA	-1.4	-	-	V
Output Voltage (ON)	VO(on)	IO = -5mA, II = -0.25mA	-	-100	-300	mV
Input Current	II	VI = -5V	-	-	-880	A
Output Current (OFF)	IO(off)	VCC = -50V, VI = 0V	-	-	-500	nA
DC Current Gain	GI	VO = -5V, IO = -5mA	68	-	-	-
Input Resistance	R1		-	7	13	k
Resistance Ratio	R2/R1		-	4.7	5.7	-
Transition Frequency	fT*1	VCE = -10V, IE = 5mA, f = 100MHz	-	250	-	MHz

Packaging Specifications

Part No.	Package	Package Size	Taping Code	Reel Size (mm)	Tape Width (mm)	Basic Ordering Unit (pcs)	Marking
UMD9N FHA	SOT-363 (UMT6)		TR	180	8	3000	D9

2304140030_ROHM-UMD9NFHATR_C3038758.pdf

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ROHM UMD9NFHATR dual transistor AECQ101 qualified NPN and PNP in compact SOT363 package for inverter applications