650V 150m GaN FET Renesas TP65H150BG4JSG-TR Gen IV SuperGaN Gallium Nitride Semiconductor Device
Product Overview
The TP65H150BG4JSG is a 650V, 150m Gallium Nitride (GaN) FET, a normally-off device utilizing Renesas's Gen IV platform. It integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET for enhanced reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxy and patented design technologies to improve manufacturability and efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge. This FET is suitable for applications requiring increased efficiency in both hard- and soft-switched circuits, leading to higher power density, reduced system size and weight, and lower overall system cost. It is easy to drive with common gate drivers, and its GSD pin layout is optimized for high-speed designs.
Product Attributes
- Brand: Renesas
- Technology: Gen IV SuperGaN GaN FET
- Material: Gallium Nitride (GaN)
- Certifications: JEDEC-qualified, RoHS compliant, Halogen-free packaging
Technical Specifications
| Part Number | Package | Package Configuration | VDS (V) min | VDSS(TR) (V) max | RDS(on) (m) max* | Qoss (nC) typ | QG (nC) typ | Absolute Maximum Ratings (Tc=25C) | Thermal Resistance |
|---|---|---|---|---|---|---|---|---|---|
| TP65H150BG4JSG-TR | 5x6 PQFN | Source Cascode | 650 | 800 | 180 | 35 | 8.8 | VDSS: 650V, VGSS: 10V, PD: 83W, ID @TC=25C: 16A, ID @TC=100C: 10A, IDM: 55A, TC: -55 to +150C, TJ: -55 to +150C, TS: -55 to +150C, TSOLD: 260C | RJC: 1.5C/W, RJA: 50C/W |
2510261727_RENESAS-TP65H150BG4JSG-TR_C49116879.pdf
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