RENESAS NP50P06KDG E1 AY P channel MOSFET transistor designed for high current switching in automotive
Key Attributes
Model Number:
NP50P06KDG-E1-AY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
23mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 P-Channel
Pd - Power Dissipation:
90W
Input Capacitance(Ciss):
5nF@10V
Gate Charge(Qg):
95nC@48V
Mfr. Part #:
NP50P06KDG-E1-AY
Package:
TO-263
Product Description
Product Overview
This P-channel MOS Field Effect Transistor, the NP50P06KDG, is designed for high current switching applications, particularly in the automotive sector. It features super low on-state resistance and low input capacitance, making it suitable for demanding automotive applications. The product is AEC-Q101 qualified and Pb-free.
Product Attributes
- Brand: Renesas Electronics
- Certifications: AEC-Q101 qualified
- Material: Pb-free (external electrode)
Technical Specifications
| Item | Symbol | Min | Typ | Max | Unit | Test Conditions |
| Drain to Source Voltage (VGS = 0 V) | VDSS | -60 | V | |||
| Gate to Source Voltage (VDS = 0 V) | VGSS | 20 | V | |||
| Drain Current (DC) (Tc = 25 C) | ID(DC) | 50 | A | |||
| Drain Current (pulse) | ID(pulse) | 150 | A | Notes1 | ||
| Total Power Dissipation (Tc = 25 C) | PT1 | 90 | W | |||
| Total Power Dissipation (Ta = 25 C) | PT2 | 1.8 | W | |||
| Channel Temperature | Tch | 175 | C | |||
| Storage Temperature | Tstg | -55 | 175 | C | ||
| Single Avalanche Current | IAS | 32 | A | Notes2 | ||
| Single Avalanche Energy | EAS | 106 | mJ | Notes2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | A | VDS = -60 V, VGS = 0 V | ||
| Gate Leakage Current | IGSS | 100 | nA | VGS = 20 V, VDS = 0 V | ||
| Gate to Source Threshold Voltage | VGS(th) | -1.0 | -1.6 | -2.5 | V | VDS = -10 V, ID = -1 mA |
| Forward Transfer Admittance | | yfs | | 15 | 30 | S | VDS = -10 V, ID = -25 A (Notes4) | |
| Drain to Source On-state Resistance | RDS(on)1 | 13.5 | 17 | m | VGS = -10 V, ID = -25 A (Notes4) | |
| Drain to Source On-state Resistance | RDS(on)2 | 15.4 | 23 | m | VGS = -4.5 V, ID = -25 A (Notes4) | |
| Input Capacitance | Ciss | 5000 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Output Capacitance | Coss | 600 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Reverse Transfer Capacitance | Crss | 300 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Turn-on Delay Time | td(on) | 20 | ns | VDD = -30 V, ID = -25 A, VGS = -10 V, RG = 0 | ||
| Rise Time | tr | 45 | ns | VDD = -30 V, ID = -25 A, VGS = -10 V, RG = 0 | ||
| Turn-off Delay Time | td(off) | 405 | ns | VDD = -30 V, ID = -25 A, VGS = -10 V, RG = 0 | ||
| Fall Time | tf | 270 | ns | VDD = -30 V, ID = -25 A, VGS = -10 V, RG = 0 | ||
| Total Gate Charge | Qg | 95 | nC | VDD = -48 V, VGS = -10 V, ID = -50 A | ||
| Gate to Source Charge | Qgs | 10 | nC | VDD = -48 V, VGS = -10 V, ID = -50 A | ||
| Gate to Drain Charge | Qgd | 26 | nC | VDD = -48 V, VGS = -10 V, ID = -50 A | ||
| Body Diode Forward Voltage | VF(S-D) | 0.97 | 1.5 | V | IF = -50 A, VGS = 0 V (Notes4) | |
| Reverse Recovery Time | trr | 50 | ns | IF = -50 A, VGS = 0 V, di/dt = -100 A/s | ||
| Reverse Recovery Charge | Qrr | 70 | nC | IF = -50 A, VGS = 0 V, di/dt = -100 A/s | ||
| Channel to Case Thermal Resistance | Rth(ch-c) | 1.67 | C/W | Notes3 | ||
| Channel to Ambient Thermal Resistance | Rth(ch-a) | 83.3 | C/W | Notes3 |
2404031253_RENESAS-NP50P06KDG-E1-AY_C3291067.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
