Lightweight TO202AA package Renesas 3P4MH9AZ P gate fully diffused mold SCR for noncontact switching
Key Attributes
Model Number:
3P4MH(9)-AZ
Product Custom Attributes
Holding Current (Ih):
-
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
-
Current - On State(It(RMS)):
-
Peak Off - State Voltage(Vdrm):
-
Current - Surge(Itsm@f):
-
Gate Trigger Voltage (Vgt):
-
Operating Temperature:
-
Mfr. Part #:
3P4MH(9)-AZ
Product Description
Product Overview
The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs featuring a small and lightweight TO-202AA package, making them easy to handle and process. They employ flame-retardant epoxy resin (UL94V-0) and are suitable for noncontact switching applications in consumer electronics, electric equipment, audio equipment, and light industry equipment.
Product Attributes
- Brand: Renesas Electronics Corporation
- Origin: Japan
- Material: Flame-retardant epoxy resin (UL94V-0)
- Package: TO-202AA
Technical Specifications
| Parameter | Symbol | 3P4MH | 3P6MH | Unit | Conditions | Remarks |
| Non-repetitive peak reverse voltage | VRSM | 500 | 700 | V | RGK = 1 k | |
| Non-repetitive peak off-state voltage | VDSM | 500 | 700 | V | RGK = 1 k | |
| Repetitive peak reverse voltage | VRRM | 400 | 600 | V | RGK = 1 k | |
| Repetitive peak off-voltage | VDRM | 400 | 600 | V | RGK = 1 k | |
| Average on-state current | IT(AV) | 3 | 3 | A | Tc = 87C, Single half-wave, = 180 | Refer to Figure 11. |
| Effective on-state current | IT(RMS) | 4.7 | 4.7 | A | ||
| Surge on-state current | ITSM | 65 (f = 50 Hz, Sine half-wave, 1 cycle) | 70 (f = 60 Hz, Sine half-wave, 1 cycle) | A | Refer to Figure 2. | |
| Fusing current | it 2dt | 20 | 20 | A | 1 mst10 ms | |
| Critical rate of rise of on-state current | dIT/dt | 50 | 50 | A/s | ||
| Peak gate power dissipation | PGM | 2 | 2 | W | f50 Hz, Duty10% | Refer to Figure 3. |
| Average gate power dissipation | PG(AV) | 0.2 | 0.2 | W | ||
| Peak gate forward current | IFGM | 1 | 1 | A | f50 Hz, Duty10% | |
| Peak gate reverse voltage | VRGM | 6 | 6 | V | ||
| Junction temperature | Tj | 40 to +125 | 40 to +125 | C | ||
| Storage temperature | Tstg | 55 to +150 | 55 to +150 | C | ||
| Repeat peak reverse current | IRRM | 100 A | Tj = 25C, VRM | MIN. |
2404071551_RENESAS-3P4MH-9-AZ_C3615058.pdf
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