650V Silicon Carbide Diode REASUNOS RSS06065F with High Speed Switching and Low Forward Voltage Drop
Key Attributes
Model Number:
RSS06065F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
65A
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
650V
Reverse Leakage Current (Ir):
20uA@650V
Voltage - Forward(Vf@If):
1.4V@6A
Current - Rectified:
6A
Mfr. Part #:
RSS06065F
Package:
TO-220F
Product Description
Product Overview
The RSS06065F is a Silicon Carbide Schottky Diode designed for high-performance applications such as Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supplies. It features a low forward voltage drop, high-speed switching capabilities, and a positive temperature coefficient, ensuring temperature-independent switching behavior.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Package: TO-220F
- Packing: Tube (50 PCS)
Technical Specifications
| Part Number | VRRM | IF (TC=150) | QC | Package | Marking | Packing Qty. |
| RSS06065F | 650V | 6A | 17nC | TO-220F | RSS06065F | 50 PCS |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | ||
| VRSM | Surge Peak Reverse Voltage | 650 | V | ||
| VR | DC Blocking Voltage | 650 | V | ||
| IF | Forward Current | 6 | A | TC = 150 | |
| IFSM | Non-Repetitive Forward Surge Current | 65 | A | TC = 25, tp = 10ms Half Sine Wave | |
| IF,Max | Non-Repetitive Peak Forward Surge Current | 520 | A | TC=25C, tP= 10 s, Pulse | |
| IFRM | Repetitive Peak Forward Surge Current | 40 | A | TC = 25, tp = 10ms Half Sine Wave | |
| TC | Maximum Case Temperature | 153 | |||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to175 |
| Symbol | Parameter | Typ. | Max. | Unit | Test Conditions | Note |
| VF | Forward Voltage | 1.40 | 1.75 | V | IF = 6A, TJ = 25 | |
| VF | Forward Voltage | 1.7 | 2.0 | V | IF = 6A, TJ = 175 | |
| IR | Reverse Current | 2 | 40 | A | VR = 650V, TJ = 25 | |
| IR | Reverse Current | 20 | 200 | A | VR = 650V, TJ = 175 | |
| Cj | Total Capacitance | 33 | pF | VR=0V, TJ = 25, f=1MHz | ||
| Cj | Total Capacitance | 33 | pF | VR=200V, TJ = 25, f=1MHz | ||
| Cj | Total Capacitance | 28 | pF | VR=400V, TJ = 25, f = 1MHz | ||
| QC | Total Capacitive Charge | 17 | nC | VR =400V,TJ = 25 | Qc= 0 | |
| Ec | Capacitance Stored Energy | 4.3 | uJ | VR =400V |
| Symbol | Parameter | Typ. | Unit | Note |
| RJC | Thermal Resistance from Junction to Case | 2.7 | /W |
2509121150_REASUNOS-RSS06065F_C51904699.pdf
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