86--136 6733 2386
quality High Speed Switching Diode R O DSK115 Schottky Barrier for Circuit Protection and Voltage Clamping factory
quality High Speed Switching Diode R O DSK115 Schottky Barrier for Circuit Protection and Voltage Clamping factory

High Speed Switching Diode R O DSK115 Schottky Barrier for Circuit Protection and Voltage Clamping

Key Attributes
Model Number: DSK115
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
25A
Reverse Leakage Current (Ir):
50uA@150V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
150V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
850mV@1A
Current - Rectified:
1A
Mfr. Part #:
DSK115
Package:
SOD-123FL
Product Description

Product Overview

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. They feature a low profile package ideal for automated placement, overvoltage protection via a guardring, low power losses, and high efficiency. The devices meet MSL level 1, per J-STD-020, with a maximum peak of 260.

Product Attributes

  • Brand: (Hongjiacheng)
  • Origin: Zhuhai Hongjiacheng Technology co., Ltd
  • Case: SOD-123FL
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Cathode line denotes the cathode end
  • Molding compound: Meets UL 94V-0 flammability rating, RoHS-compliant, halogen-free

Technical Specifications

ParameterSymbolUnitDSK12DSK14DSK15DSK16DSK18DSK110DSK115DSK120
Device marking codeK12K14K15K16K18K110K115K120
Maximum Repetitive Peak Reverse VoltageVRRMV2040506080100150200
Maximum RMS VoltageVRMSV142835425670105140
Maximum DC blocking VoltageVDCV2040506080100150200
Maximum Average Forward Rectified Current @ 60Hz sinewave, Resistance load,TL (Fig.1)IF(AV)A1.0
Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine waveIFSMA25
Storage temperatureTstg-55 ~ +150
Junction temperatureTj-55 ~ +125
Typical Thermal Resistance (Junction to Ambient)RJ-A/W85
Typical Thermal Resistance (Junction to Lead)RJ-L/W20
Maximum instantaneous forward voltage (IF=1.0A)VFV0.550.700.850.90
Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=25)IR1mA0.20.05
Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=100)IR2mA20
Typical junction capacitance (4.0V DC, 1MHz)CJpF11080

2506261420_R-O-DSK115_C28646287.pdf

Related Products
quality Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits factory
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
quality Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications factory
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.