Dual transistor ROHM EMX2T2R designed to minimize mounting cost and area with small signal operation
Key Attributes
Model Number:
EMX2T2R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
180MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
EMX2T2R
Package:
SOT-563
Product Description
Product Overview
The EMX2, UMX2N, and IMX2 are general-purpose dual transistors designed for small signal amplification. They feature independent transistor elements within a single package, offering reduced mounting cost and area without interference. These transistors are compatible with automatic mounting machines.
Product Attributes
- Brand: ROHM
- Origin: Japan (implied by ROHM Co., Ltd.)
Technical Specifications
| Part No. | Package | Package Size | VCEO (V) | IC (mA) | PD (mW/Total) | BVCBO (V) | BVCEO (V) | BVEBO (V) | ICBO (nA) | IEBO (nA) | VCE(sat) (mV) | hFE | fT (MHz) | Cob (pF) |
| EMX2 | SOT-563 (EMT6) | 1616 | 50 | 150 | 150*1*2 | 60 | 50 | 7 | 100 | 100 | 400 | 120-560 | 180 | 2.0-3.5 |
| UMX2N | SOT-363 (UMT6) | 2021 | 50 | 150 | 150*1*2 | 60 | 50 | 7 | 100 | 100 | 400 | 120-560 | 180 | 2.0-3.5 |
| IMX2 | SOT-457 (SMT6) | 2928 | 50 | 150 | 300*1*3 | 60 | 50 | 7 | 100 | 100 | 400 | 120-560 | 180 | 2.0-3.5 |
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
2504101957_ROHM-EMX2T2R_C2766154.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
