Renesas 3P6MH AE AZ P gate fully diffused mold SCR with 3 amp on current and TO 202AA mounting dimensions
Key Attributes
Model Number:
3P6MH(AE)-AZ
Product Custom Attributes
Mfr. Part #:
3P6MH(AE)-AZ
Product Description
Renesas Electronics 3P4MH, 3P6MH 3 A MOLD SCR DATA SHEET
The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs with an average on-current of 3 A. The repeat peak off- voltages (and reverse voltages) are 400 V and 600 V. These transistors feature a small and lightweight package, are easy to handle on the mounting surface due to their TO-202AA dimensions, and allow for processing of lead wires and heatsink (tablet) using jigs. They employ flame-retardant epoxy resin (UL94V-0).
Applications
Noncontact switches of consumer electronic equipment, electric equipment, audio equipment, and light industry equipment.
Product Attributes
- Brand: Renesas Electronics
- Origin: Printed in Japan
- Material: Flame-retardant epoxy resin (UL94V-0)
- Certifications: UL94V-0
Technical Specifications
| Parameter | Symbol | 3P4MH | 3P6MH | Unit | Conditions | Remarks |
| Non-repetitive peak reverse voltage | VRSM | 500 | 700 | V | RGK = 1 k | |
| Non-repetitive peak off-state voltage | VDSM | 500 | 700 | V | RGK = 1 k | |
| Repetitive peak reverse voltage | VRRM | 400 | 600 | V | RGK = 1 k | |
| Repetitive peak off-voltage | VDRM | 400 | 600 | V | RGK = 1 k | |
| Average on-state current | IT(AV) | 3 | 3 | A | Tc = 87C, Single half-wave, = 180 | Refer to Figure 11. |
| Effective on-state current | IT(RMS) | 4.7 | 4.7 | A | ||
| Surge on-state current | ITSM | 65 (f = 50 Hz, Sine half-wave, 1 cycle) | 70 (f = 60 Hz, Sine half-wave, 1 cycle) | A | Refer to Figure 2. | |
| Fusing current | it 2dt | 20 | 20 | A | 1 mst10 ms | |
| Critical rate of rise of on-state current | dIT/dt | 50 | 50 | A/s | ||
| Peak gate power dissipation | PGM | 2 | 2 | W | f50 Hz, Duty10% | Refer to Figure 3. |
| Average gate power dissipation | PG(AV) | 0.2 | 0.2 | W | ||
| Peak gate forward current | IFGM | 1 | 1 | A | f50 Hz, Duty10% | |
| Peak gate reverse voltage | VRGM | 6 | 6 | V | ||
| Junction temperature | Tj | 40 to +125 | 40 to +125 | C | ||
| Storage temperature | Tstg | 55 tp +150 | 55 tp +150 | C | ||
| Repeat peak reverse current | IRRM | 100 A | Tj = 25C, VRM | MIN. |
2404071550_RENESAS-3P6MH-AE-AZ_C3614970.pdf
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