R O 1N5822 Axial Schottky Barrier Diode 40 Volt Peak Reverse Voltage High Surge Current Capability

Key Attributes
Model Number: 1N5822
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@40V
Non-Repetitive Peak Forward Surge Current:
80A
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
525mV@3A
Current - Rectified:
3A
Mfr. Part #:
1N5822
Package:
DO-201AD
Product Description

Product Overview

These axial Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. They offer low forward voltage drop, high current capability, high reliability, and high surge current capability.

Product Attributes

  • Brand: Zhuhai Hongjiacheng Technology co., Ltd
  • Case: DO-201AD
  • Terminals: Solder plated, solderable per MIL-STD-202, Method 208 guaranteed
  • Polarity: Cathode line denotes the cathode end
  • Molding compound meets UL 94V-0 flammability rating

Technical Specifications

ParameterSymbolUnit1N58201N58211N5822
Maximum Repetitive Peak Reverse VoltageVRRMV203040
Maximum RMS VoltageVRMSV142128
Maximum DC blocking VoltageVDCV203040
Maximum Average Forward Rectified Current @60Hz sine wave, Resistance load,TL (Fig.1)IF(AV)A3.0
Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine waveIFSMA80
Storage temperatureTstg-55 ~ +150
Junction temperatureTj-55 ~ +150
Typical Thermal Resistance (Junction to Ambient)RJ-A/W20
Typical Thermal Resistance (Junction to Lead)RJ-L/W10
Maximum instantaneous forward voltage (IF=3.0A)VFV0.4750.5000.525
Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=25)IR1mA0.1
Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=100)IR2mA5
Typical junction capacitance (4.0V DC, 1MHz)CJpF250

2505281022_R-O-1N5822_C47345510.pdf

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