PNP epitaxial planar silicon transistor ROHM 2SA2092TLQ designed for amplification and fast switching
Key Attributes
Model Number:
2SA2092TLQ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SA2092TLQ
Package:
TSMT-3
Product Description
Product Overview
The ROHM 2SA2092 is a PNP epitaxial planar silicon transistor designed for high-speed switching and low-frequency amplification. It features high-speed switching with a typical fall time of 30ns at IC = -1A, low saturation voltage (Typ. -200mV at IC = -500mA, IB = -50mA), strong discharge resistance for inductive and capacitance loads, and low switching noise. This transistor is suitable for applications requiring fast switching characteristics and efficient amplification.
Product Attributes
- Brand: ROHM
- Structure: PNP epitaxial planar silicon transistor
- Packaging: TSMT3 (Taping)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Collector-base voltage | VCBO | -60 | V | |||
| Collector-emitter voltage | VCEO | -60 | V | |||
| Emitter-base voltage | VEBO | -6 | V | |||
| Collector current (DC) | IC | -1 | A | |||
| Collector current (PULSE, Pw=10ms) | ICP | -2 | A | |||
| Power dissipation (Each terminal mounted on a recommended land) | PC | 500 | mW | *1 | ||
| Junction temperature | Tj | 150 | C | |||
| Range of storage temperature | Tstg | -55 | +150 | C | ||
| Collector-emitter breakdown voltage | BVCEO | -60 | V | IC= -100A | ||
| Collector-base breakdown voltage | BVCBO | -60 | V | IC= -1mA | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE= -100A | ||
| Collector cut-off current | ICBO | -1.0 | A | VCB= -40V, VEB= -4V | ||
| Emitter cut-off current | IEBO | -1.0 | A | |||
| Collector-emitter saturation voltage | VCE(sat) | -200 | -500 | mV | IC= -500mA, IB= -50mA (*1) | |
| DC current gain | hFE | 120 | 300 | VCE= -2V, IC= -100mA (*3) | ||
| Transition frequency | fT | 270 | MHz | VCE= -10V, IE=100mA, f=10MHz (*1) | ||
| Collector output capacitance | Cob | 15 | 30 | pF | VCB= -10V, IE=0, f=1MHz (*1) | |
| Turn-on time | ton | - | ns | VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2) | ||
| Storage time | tstg | - | ns | VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2) | ||
| Fall time | tf | 30 | ns | VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2) |
*1 Pulse measurement
*2 See switching test circuit
*3 hFE rank
hFE RANK
| Rank | hFE |
| Q | 120-270 |
2202132000_ROHM-2SA2092TLQ_C2840174.pdf
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