NPN silicon transistor ROHM IMX9T110 epitaxial planar type suitable for general electronic equipment
Key Attributes
Model Number:
IMX9T110
Product Custom Attributes
Emitter-Base Voltage(Vebo):
12V
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
350MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-
Mfr. Part #:
IMX9T110
Package:
SC-74
Product Description
Product Overview
The IMX9 is a general-purpose, isolated dual transistor featuring two 2SD2114K chips in a SMT package. Its independent transistor elements prevent interference, and it is compatible with SMT3 automatic mounting machines, offering reduced mounting costs and area. This NPN silicon transistor is suitable for general electronic equipment.
Product Attributes
- Brand: ROHM
- Type: Epitaxial planar type NPN silicon transistor
- Material: Silicon
- Packaging: SMT6 (EIAJ: SC-74)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) | ||||||
| Collector-base voltage | VCBO | 25 | V | |||
| Collector-emitter voltage | VCEO | 20 | V | |||
| Emitter-base voltage | VEBO | 12 | V | |||
| Collector current | IC | 500 | mA | |||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature | Tstg | 55 | +150 | C | ||
| Power dissipation | Pd | 300(TOTAL) | mW | * 200mW per element must not be exceeded. | ||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector-base breakdown voltage | BVCBO | 25 | V | IC=10A | ||
| Collector-emitter breakdown voltage | BVCEO | 20 | V | IC=1mA | ||
| Emitter-base breakdown voltage | BVEBO | 12 | V | IE=10A | ||
| Collector cutoff current | ICBO | 0.18 | A | VCB=20V | ||
| Emitter cutoff current | IEBO | 0.5 | A | VEB=10V | ||
| DC current transfer ratio | hFE | 560 | 2700 | VCE=3V, IC=10mA | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC/IB=500mA/20mA | ||
| Transition frequency | fT | 350 | MHz | VCE=10V, IE=50mA, f=100MHz | ||
| Output capacitance | Cob | 8 | pF | VCB=10V, IE=0A, f=1MHz | ||
| Output On-resistance | Ron | 0.8 | IB=1mA, Vi=100mVrms, f=1kHz | |||
2410010100_ROHM-IMX9T110_C2766155.pdf
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