Digital transistor PNP type ROHM DTA013ZEBTL featuring built in bias resistors suitable for inverter and driver circuit

Key Attributes
Model Number: DTA013ZEBTL
Product Custom Attributes
DC Current Gain:
30@5mA,10V
Current - Collector(Ic):
100mA
Type:
PNP
Output Voltage(VO(on)):
70mV
Transition Frequency(fT):
250MHz
Input Resistor:
1kΩ
Vce Saturation(VCE(sat)):
150mV@500uA,5mA
Resistor Ratio:
10
Number:
-
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA013ZEBTL
Package:
SC-89
Product Description

Product Overview

The DTA013Z series is a line of PNP digital transistors with built-in biasing resistors, designed for simplified circuit design. These transistors feature integrated R1 (1k) and R2 (10k) resistors, enabling the configuration of inverter circuits without the need for external input resistors. This simplifies operation by requiring only the setting of on/off conditions, making circuit design easy. They are suitable for applications such as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC013Z series.

Product Attributes

  • Brand: ROHM
  • Product Type: Digital Transistor (Bias Resistor Built-in Transistor)
  • Transistor Type: PNP

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
DTA013ZM SOT-723 (VMT3) 1212 T2L 180 8 8000 57
DTA013ZEB SOT-416FL (EMT3F) 1616 TL 180 8 3000 57
DTA013ZUB SOT-323FL (UMT3F) 2021 TL 180 8 3000 57
Parameter Symbol Value Unit
Supply Voltage VCC -50 V
Maximum Output Current IC(MAX.) -100 mA
Built-in Resistor R1 R1 1 k
Built-in Resistor R2 R2 10 k
Input Voltage VI(off) (VCC = -5V, IO = -100A) VI(off) -0.4 V
Input Voltage VI(on) (VO = -0.3V, IO = -5mA) VI(on) -1.0 -
Output Voltage VO(on) (IO = -5mA, II = -0.5mA) VO(on) -70 to -150 mV
Input Current II (VI = -5V) II -7.2 mA
Output Current IO(off) (VCC = -50V, VI = 0V) IO(off) -500 nA
DC Current Gain (VO = -10V, IO = -5mA) GI 30 -
Input Resistance R1 R1 0.7 to 1.3 k
Resistance Ratio R2/R1 R2/R1 8 to 12 -
Transition Frequency (VCE = -10V, IE = 5mA, f = 100MHz) fT 250 MHz
Parameter Symbol DTA013ZM DTA013ZEB DTA013ZUB Unit
Power Dissipation PD*2 150 150 200 mW
Parameter Symbol Value Unit
Junction Temperature Tj 150
Range of Storage Temperature Tstg -55 to +150

2410231749_ROHM-DTA013ZEBTL_C5252697.pdf

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