Built in Bias Resistor NPN Digital Transistor ROHM DTC113ZKAT146 Designed for Interface and Inverter
Key Attributes
Model Number:
DTC113ZKAT146
Product Custom Attributes
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
1kΩ
Resistor Ratio:
10
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC113ZKAT146
Package:
SOT-346
Product Description
Product Overview
The DTC113Z series is a family of NPN digital transistors designed for efficient circuit configuration. Featuring built-in biasing resistors (R1 = 1k, R2 = 10k), these transistors simplify inverter circuit design by eliminating the need for external input resistors. This integrated design allows for straightforward operation by simply setting on/off conditions, making circuit design easier. The series is ideal for applications such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA113Z series.
Product Attributes
- Brand: ROHM
- Product Type: Digital Transistor (Bias Resistor Built-in Transistor)
- Polarity: NPN
- RoHS: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| General Parameters | ||||
| Supply Voltage | VCC | 50 | V | |
| Output Current (Max.) | IC(MAX.) | 100 | mA | |
| Resistor R1 | R1 | 1 | k | |
| Resistor R2 | R2 | 10 | k | |
| Absolute Maximum Ratings | ||||
| Supply voltage | VCC | 50 | V | (Ta = 25C) |
| Input voltage | VIN | -5 to 10 | V | (Ta = 25C) |
| Output current | IO | 100 | mA | (Ta = 25C) |
| Collector current | IC(MAX)*1 | 100 | mA | (Ta = 25C) |
| Power dissipation (DTC113ZUA) | PD*2 | 200 | mW | (Ta = 25C) |
| Power dissipation (DTC113ZKA) | PD*2 | 200 | mW | (Ta = 25C) |
| Junction temperature | Tj | 150 | (Ta = 25C) | |
| Range of storage temperature | Tstg | -55 to +150 | ||
| Electrical Characteristics | ||||
| Input voltage (VI(off)) | VI(off) | - | 0.3 | V (VCC = 5V, IO = 100A) |
| Input voltage (VI(on)) | VI(on) | 3.0 | - | V (VO = 0.3V, IO = 20mA) |
| Output voltage (VO(on)) | VO(on) | - | 100 to 300 | mV (IO = 10mA, II = 0.5mA) |
| Input current | II | - | 7.2 | mA (VI = 5V) |
| Output current (IO(off)) | IO(off) | - | 500 | nA (VCC = 50V, VI = 0V) |
| DC current gain | GI | 33 | - | - (VO = 5V, IO = 5mA) |
| Input resistance | R1 | 0.7 to 1.3 | k | - |
| Resistance ratio | R2/R1 | 8 to 12 | - | - |
| Transition frequency | fT*1 | - | 250 | MHz (VCE = 10V, IE = -5mA, f = 100MHz) |
| Models & Packaging | ||||
| Part No. | Package | Package size | Taping code | Reel size (mm) |
| DTC113ZUA | SOT-323 (UMT3) | 2023 | T106 | 180 |
| DTC113ZKA | SOT-346 (SMT3) | 2928 | T146 | 180 |
| Packaging Specifications (Common) | ||||
| Tape width (mm) | 8 | |||
| Basic ordering unit (pcs) | 3000 | |||
| Marking (DTC113ZUA) | 121 | |||
| Marking (DTC113ZKA) | E21 | |||
1810172212_ROHM-DTC113ZKAT146_C111719.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
