Shenzhen Haoruijia Elec BT131-600D triac for stable power control applications and low voltage drop
Key Attributes
Model Number:
BT131-600D
Product Custom Attributes
Holding Current (Ih):
10mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
8.5A
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT131-600D
Package:
SOT-223-3L
Product Description
Product Overview
The BT131 is a high-reliability and stable triac with a low on-state voltage drop, manufactured using advanced glass passivation technology. It is suitable for various power control applications.
Product Attributes
- Brand: BT131-600D
- Origin: Shenzhen
- Packaging: Tape & Reel (2.5K/Reel, 5K/Box, 25K/Carton)
- Shipping Method: Express
- Storage Conditions: Temperature 10-30, Humidity <60%, Shelf Life 1 Year
Technical Specifications
| Name | Symbol | Specification Value | Unit | Test Conditions |
| Repetitive Peak Off-State Voltage | VDRM/VRRM | 600 | V | |
| On-State RMS Current | IT(RMS) | 1 | A | Tc=105 |
| Surge Current | ITSM | 8.5 | A | Sinewave 60Hz t=16.7ms |
| I2t | I2t | 0.35 | A2s | tp=10ms |
| Critical Rate of Rise of On-State Current | dI/dt | 20 | A/s | IG=2IGT tr100ns F=120Hz |
| Peak Gate Current | IGM | 1 | A | Tj=125 tp=20s |
| Peak Gate Voltage | VGM | 5 | V | Tj=125 |
| Peak Gate Power | PGM | 5 | W | Tj=125 |
| Average Gate Power | PG(AV) | 1 | W | Tj=125 |
| Junction Temperature | Tj | 125 | ||
| Storage Temperature | Tstg | -40~150 | ||
| Repetitive Peak Off-State Current | IDRM | MAX 5 A | VDRM=VRRM Tj=25 | |
| Repetitive Peak Off-State Current | IDRM | MAX 1 mA | VDRM=VRRM Tj=125 | |
| On-State Voltage | VTM | MAX 1.5 V | IT=1.4A Tj=25 | |
| Holding Current | IH | MAX 10 mA | IGT=500mA | |
| Latching Current | IL | MAX 15 mA | IG= 1.2IGT -- | |
| Latching Current | IL | 25 mA | ||
| Gate Trigger Current | IGT | MAX 10 mA | VD=12V RL=30 --- | |
| Gate Trigger Voltage | VGT | 1.3 V | --- | |
| Non-Trigger Gate Voltage | VGD | MIN 0.2 V | VD=VDRM RL=3.3K Tj=125 | |
| Critical Rate of Rise of Off-State Voltage | dV/dt | MIN 10 V/s | VDM=67%VDRM Gate open Tj=125 | |
| Critical Rate of Commutation Voltage | (dV/dt)C | MIN 2 V/s | (dI/dt)C=5.3A/ms Gate open Tj=125 |
2410121233_Shenzhen-Haoruijia-Elec--BT131-600D_C2931263.pdf
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