Shenzhen Haoruijia Elec BT131 1A TRIAC for Power Control in Leakage Protectors and Lamp Relay Exciters

Key Attributes
Model Number: BT131
Product Custom Attributes
Holding Current (Ih):
10mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
8.5A
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT131
Package:
SOT-89
Product Description

Product Overview

The BT131 Series 1A TRIACs are designed for various power control applications. They feature advanced glass passivation for lower on-state voltage drop, high reliability, and stability. These TRIACs are commonly used in pulse igniters, negative ion generators, small motor controllers, leakage protectors, and lamp relay exciters.

Product Attributes

  • Brand: SIKA ()
  • Origin: China
  • Packaging: SOT-89 (Tape & Reel: 1K/Reel, 10K/Box, 40K/Carton)
  • Storage Conditions: Temperature 10-30, Humidity <60%, Shelf Life 1 Year

Technical Specifications

NameSymbolSpecification ValueUnitTest Conditions
Off-State Repetitive Peak VoltageVDRM/VRRM600V
On-State RMS CurrentIT(RMS)1ATc=105
Surge CurrentITSM8.5ASinewave 60Hz t=16.7ms
I2tI2t0.35A2stp=10ms
Critical Rate of Rise of On-State CurrentdI/dt20A/sIG=2IGT tr100ns F=120Hz
Peak Gate CurrentIGM1ATj=125 tp=20s
Peak Gate VoltageVGM5VTj=125
Peak Gate PowerPGM5WTj=125
Average Gate PowerPG(AV)1WTj=125
Junction TemperatureTj125
Storage TemperatureTstg-40~150
Off-State Repetitive Peak CurrentIDRMMAX 5 AVDRM=VRRM Tj=25
Off-State Repetitive Peak CurrentIDRMMAX 1 mAVDRM=VRRM Tj=125
On-State VoltageVTMMAX 1.5 VIT=1.4A Tj=25
Holding CurrentIHMAX 10 mAIGT=500mA
Latching CurrentILMAX 15 mAIG= 1.2IGT --
Latching CurrentIL25 mAIG= 1.2IGT
Gate Trigger CurrentIGTMAX 10 mAVD=12V RL=30
Gate Trigger CurrentIGT5 mA--
Gate Trigger VoltageVGT1.3 V---
Non-Trigger Gate VoltageVGDMIN 0.2 VVD=VDRM RL=3.3K Tj=125
Critical Rate of Rise of Off-State VoltagedV/dtMIN 10 V/sVDM=67%VDRM Gate open Tj=125
Commutation Critical Rate of Rise of Voltage(dV/dt)CMIN 2 V/s(dI/dt)C=5.3A/ms Gate open Tj=125

2409280202_Shenzhen-Haoruijia-Elec--BT131_C2931264.pdf

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