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quality Simplified Circuit Design Using ROHM DTC114TKAT146 NPN Digital Transistor with Built in Input Resistors factory
quality Simplified Circuit Design Using ROHM DTC114TKAT146 NPN Digital Transistor with Built in Input Resistors factory

Simplified Circuit Design Using ROHM DTC114TKAT146 NPN Digital Transistor with Built in Input Resistors

Key Attributes
Model Number: DTC114TKAT146
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
10kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC114TKAT146
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The DTC114T series NPN digital transistor features built-in biasing resistors, simplifying circuit design by eliminating the need for external input resistors. This allows for easy configuration of inverter circuits, requiring only the setting of on/off conditions. Complementary PNP types are available in the DTA114T series. These transistors are ideal for applications such as inverters, interfaces, and drivers.

Product Attributes

  • Brand: ROHM
  • Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)
  • RoHS: Yes

Technical Specifications

Parameter Symbol Conditions Value Unit
General Parameters
Collector-Emitter Voltage VCEO 50 V
Collector Current IC 100 mA
Input Resistance (R1) R1 10 k
Built-in Resistor Value (Typ.) R1 7 - 13 k
Absolute Maximum Ratings (Ta = 25C)
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Power Dissipation (DTC114TM/TEB/TE) PD*1 150 mW
Power Dissipation (DTC114TUB/TUA/TKA) PD*1 200 mW
Junction Temperature Tj 150
Range of Storage Temperature Tstg -55 to +150
Electrical Characteristics (Ta = 25C)
Collector-Base Breakdown Voltage BVCBO IC = 50A 50 V
Collector-Emitter Breakdown Voltage BVCEO IC = 1mA 50 V
Emitter-Base Breakdown Voltage BVEBO IE = 50A 5 V
Collector Cut-off Current ICBO VCB = 50V - 500 nA
Emitter Cut-off Current IEBO VEB = 4V - 500 nA
Collector-Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA - 300 mV
DC Current Gain hFE VCE = 5V, IC = 1mA 100 - 600 -
Transition Frequency fT*2 VCE = 10V, IE = -5mA, f = 100MHz - 250 MHz
Packaging Specifications
Part No. Package Package Size Basic ordering unit (pcs) Marking
DTC114TM SOT-723 1212 8000 04
DTC114TEB SOT-416FL 1616 3000 04
DTC114TE SOT-416 1616 3000 04
DTC114TUB SOT-323FL 2021 3000 04
DTC114TUA SOT-323 2021 3000 04
DTC114TKA SOT-346 2928 3000 04

1810122114_ROHM-DTC114TKAT146_C111720.pdf

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