Low Gate Charge 650V GaN FET RENESAS TP65H150G4PS Featuring Gen IV SuperGaN Platform in TO220 Package
Product Overview
The TP65H150G4PS is a 650V, 150m Gallium Nitride (GaN) FET in a TO-220 package, featuring a normally-off, cascode device structure. It combines advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies for superior reliability and performance. Leveraging the Gen IV SuperGaN platform, it offers improved efficiency through lower gate charge, output capacitance, crossover loss, and reverse recovery charge compared to silicon. This FET is designed for increased power density, reduced system size and weight, and lower overall system cost, making it suitable for applications such as power adapters, low power SMPS, and lighting.
Product Attributes
- Brand: Renesas Electronics
- Material: Gallium Nitride (GaN)
- Packaging: RoHS compliant and Halogen-free
- Technology: Gen IV SuperGaN
- Qualification: JEDEC-qualified
Technical Specifications
| Part Number | Package | VDS (V) min | VDSS(TR) (V) max | RDS(on) (m) max* | Qoss (nC) typ | QG (nC) typ |
| TP65H150G4PS | 3 lead TO-220 | 650 | 800 | 180 | 34 | 8 |
2510261727_RENESAS-TP65H150G4PS_C48782921.pdf
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