Low VCEsat PNP transistor ROHM 2SAR513RTL suitable for high speed switching and driver application circuits
Key Attributes
Model Number:
2SAR513RTL
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
400MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SAR513RTL
Package:
SOT-346T
Product Description
Product Overview
The 2SAR513R is a PNP middle power transistor designed for driver applications. It features a low VCE(sat) of -400mV (Max.) at IC/IB=-500mA/-25mA, making it suitable for low frequency amplification and high-speed switching applications. This transistor is available in the SOT-346T (TSMT3) package and has a complementary NPN type, 2SCR513R.
Product Attributes
- Brand: ROHM
- Origin: Japan (implied by ROHM Co., Ltd.)
- Package: SOT-346T (TSMT3)
- Taping Code: TL
- Reel Size: 180 mm
- Tape Width: 8 mm
- Basic Ordering Unit: 3000 pcs
- Marking: MC
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | VCEO | -50 | V | |
| Collector current | IC | -1 | A | |
| Collector current (Pulsed) | ICP*1 | PW=10ms, Single pulse | -2 | A |
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 0.5 | W |
| Power dissipation | PD*3 | Mounted on a ceramic board(40x40x0.7mm). | 1.0 | W |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | BVCBO | IC = -100A | -50 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -50 | V |
| Emitter-base breakdown voltage | BVEBO | IE = -100A | -6 | V |
| Collector cut-off current | ICBO | VCB = -50V | -1.0 | A |
| Emitter cut-off current | IEBO | VEB = -4V | -1.0 | A |
| Collector-emitter saturation voltage | VCE(sat)*4 | IC = -500mA, IB = -25mA | -400 (Max.) | mV |
| DC current gain | hFE | VCE = -2V, IC = -50mA | 180 - 450 | - |
| Transition frequency | fT*4 | VCE = -10V, IE = 200mA, f = 100MHz | 400 | MHz |
| Output capacitance | Cob | VCB = -10V, IE = 0A, f = 1MHz | 12 | pF |
| Turn-On time | ton | IC = -500mA, IB1 = -50mA, IB2 = 50mA, VCC -10V, RL = 20 | 40 (ns) | ns |
| Storage time | tstg | 250 (ns) | ns | |
| Fall time | tf | 35 (ns) | ns |
2409291934_ROHM-2SAR513RTL_C2837799.pdf
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