High speed switching transistor ROHM 2SC5866TLR with 2A collector current and low saturation voltage
Key Attributes
Model Number:
2SC5866TLR
Product Custom Attributes
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
200MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
2SC5866TLR
Package:
SC-96
Product Description
2SC5866 Medium Power Transistor
The 2SC5866 is a medium power transistor designed for high-speed switching applications. It features high speed switching with a typical fall time of 35ns at IC=2A, low saturation voltage (typically 200mV at IC=1.0A, IB=100mA), and strong discharge power for inductive and capacitive loads. It complements the 2SA2094 transistor. Applications include low frequency amplifiers and high-speed switching.
Product Attributes
- Brand: ROHM
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Value (Min) | Value (Typ) | Value (Max) | Unit |
| Collector-base voltage | VCBO | 60 | V | |||
| Collector-emitter voltage | VCEO | 60 | V | |||
| Emitter-base voltage | VEBO | 6 | V | |||
| Collector current | IC | 2 | A | |||
| Collector current (Pulsed) | ICP*1 | Pw=10ms | 4 | A | ||
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 0.5 | W | ||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | BVCBO | IC = 100A | 60 | V | ||
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 60 | V | ||
| Emitter-base breakdown voltage | BVEBO | IE = 100A | 6 | V | ||
| Collector cut-off current | ICBO | VCB = 40V | 1.0 | A | ||
| Emitter cut-off current | IEBO | VEB = 4V | 1.0 | A | ||
| Collector-emitter saturation voltage | VCE(sat) | IC = 1.0A, IB = 100mA | 200 | 500 | mV | |
| DC current gain | hFE | VCE = 2V, IC = 100mA | 120 | 390 | - | |
| Transition frequency | fT*3 | VCE = 10V, IE = -100mA, f = 10MHz | 200 | MHz | ||
| Output capacitance | Cob | VCB = 10V, IE = 0A, f = 1MHz | 10 | pF | ||
| Turn-On time | ton*3 | IC = 2A, IB1 = 200mA, IB2 = -200mA, VCC 25V, RL = 12.5 (See test circuit) | 50 | ns | ||
| Storage time | tstg*3 | 120 | ns | |||
| Fall time | tf*3 | 35 | ns |
2107272240_ROHM-2SC5866TLR_C213435.pdf
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