86--136 6733 2386
quality dual digital transistor ROHM UMH3NTN for inverter and driver applications featuring compact SOT package factory
quality dual digital transistor ROHM UMH3NTN for inverter and driver applications featuring compact SOT package factory

dual digital transistor ROHM UMH3NTN for inverter and driver applications featuring compact SOT package

Key Attributes
Model Number: UMH3NTN
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Operating Temperature:
-25℃~+150℃
DC Current Gain:
100@1mA,5V
Current - Collector(Ic):
100mA
Input Resistor:
6.11kΩ
Number:
-
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMH3NTN
Package:
SOT-363
Product Description

Product Overview

The EMH3, UMH3N, and IMH3A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices offer the advantage of integrating two independent transistor elements within a single SOT-563, SOT-363, or SOT-457 package, enabling reduced mounting costs and space. They are compatible with automatic mounting machines, ensuring efficient integration into manufacturing processes.

Product Attributes

  • Brand: ROHM
  • Product Series: EMH3 / UMH3N / IMH3A
  • Type: Dual digital transistor
  • Package Types: SOT-563 (EMT6), SOT-363 (UMT6), SOT-457 (SMT6)

Technical Specifications

Parameter Model Symbol Conditions Min. Typ. Max. Unit
Collector-base voltage All VCBO 50 V
Collector-emitter voltage All VCEO 50 V
Emitter-base voltage All VEBO 5 V
Collector current All IC 100 mA
Power dissipation (Total) EMH3 / UMH3N PD 150 mW
Power dissipation (Total) IMH3A PD 300 mW
Junction temperature All Tj 150
Range of storage temperature All Tstg -55 +150
Collector-base breakdown voltage All BVCBO IC = 50A 50 V
Collector-emitter breakdown voltage All BVCEO IC = 1mA 50 V
Emitter-base breakdown voltage All BVEBO IE = 50A 5 V
Collector cut-off current All ICBO VCB = 50V 500 nA
Emitter cut-off current All IEBO VEB = 4V 500 nA
Collector-emitter saturation voltage All VCE(sat) IC = 5mA, IB = 0.25mA 300 mV
DC current gain All hFE VCE = 5V, IC = 1mA 100 250 600
Input resistance All R1 3.29 6.11 k
Transition frequency All fT VCE = 10V, IE = -5mA, f = 100MHz 250 MHz
Package EMH3 SOT-563 (EMT6)
Package size EMH3 1616
Taping code EMH3 T2R
Reel size (mm) EMH3 180
Tape width (mm) EMH3 8
Basic ordering unit (pcs) EMH3 8000
Marking EMH3 H3
Package UMH3N SOT-363 (UMT6)
Package size UMH3N 2021
Taping code UMH3N TN
Reel size (mm) UMH3N 180
Tape width (mm) UMH3N 8
Basic ordering unit (pcs) UMH3N 3000
Marking UMH3N H3
Package IMH3A SOT-457 (SMT6)
Package size IMH3A 2928
Taping code IMH3A T110
Reel size (mm) IMH3A 180
Tape width (mm) IMH3A 8
Basic ordering unit (pcs) IMH3A 3000
Marking IMH3A H3

1804132334_ROHM-UMH3NTN_C123008.pdf
Related Products
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems factory
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
quality power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching factory
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.