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quality Space saving SOT363 package ROHM UMD6NTR dual digital transistor for versatile inverter and interface factory
quality Space saving SOT363 package ROHM UMD6NTR dual digital transistor for versatile inverter and interface factory

Space saving SOT363 package ROHM UMD6NTR dual digital transistor for versatile inverter and interface

Key Attributes
Model Number: UMD6NTR
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
6.11kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMD6NTR
Package:
SOT-363
Product Description

Product Overview

The EMD6 / UMD6N / IMD6A series are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These transistors are available in SOT-563 (EMD6), SOT-363 (UMD6N), and SOT-457 (IMD6A) packages, offering space-saving benefits and reduced mounting costs. They feature independent transistor elements to prevent interference. The series includes both NPN (DTr1) and PNP (DTr2) configurations, providing versatile solutions for various circuit designs.

Product Attributes

  • Brand: ROHM
  • Product Series: EMD6 / UMD6N / IMD6A
  • Package Types: SOT-563 (EMT6), SOT-363 (UMT6), SOT-457 (SMT6)

Technical Specifications

Model Package Package Size (mm) Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMD6 SOT-563 (EMT6) 1616 T2R 180 8 8000 D6
UMD6N SOT-363 (UMT6) 2021 TR 180 8 3000 D6
IMD6A SOT-457 (SMT6) 2928 T108 180 8 3000 D6
Parameter Symbol DTr1 (NPN) Value DTr2 (PNP) Value Unit
Outline Parameters
VCEO VCEO 50 -50 V
IC IC 100 -100 mA
R1 R1 4.7k 4.7k
Absolute Maximum Ratings (Ta = 25C)
Collector-base voltage VCBO 50 -50 V
Collector-emitter voltage VCEO 50 -50 V
Emitter-base voltage VEBO 5 -5 V
Collector current IC 100 -100 mA
Power dissipation (EMD6/UMD6N) PD*1*2 150 / Total mW
Power dissipation (IMD6A) PD*1*3 300 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Electrical Characteristics (Ta = 25C) - DTr1 (NPN)
Collector-base breakdown voltage BVCBO 50 - V
Collector-emitter breakdown voltage BVCEO 50 - V
Emitter-base breakdown voltage BVEBO 5 - V
Collector cut-off current ICBO - 500 nA
Emitter cut-off current IEBO - 500 nA
Collector-emitter saturation voltage VCE(sat) - 300 mV
DC current gain hFE 100 - 600 (Typ. 250) - -
Input resistance R1 3.29 - 6.11 (Typ. 4.7) - k
Transition frequency fT*4 - 250 MHz
Electrical Characteristics (Ta = 25C) - DTr2 (PNP)
Collector-base breakdown voltage BVCBO - -50 V
Collector-emitter breakdown voltage BVCEO - -50 V
Emitter-base breakdown voltage BVEBO - -5 V
Collector cut-off current ICBO - -500 nA
Emitter cut-off current IEBO - -500 nA
Collector-emitter saturation voltage VCE(sat) - -300 mV
DC current gain hFE - 100 - 600 (Typ. 250) -
Input resistance R1 - 3.29 - 6.11 (Typ. 4.7) k
Transition frequency fT*4 - 250 MHz

*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor.

Applications

  • INVERTER
  • INTERFACE
  • DRIVER

2109221453_ROHM-UMD6NTR_C510059.pdf

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