Simplified Circuit Design with ROHM DTC023JEBTL Digital Transistor Featuring Built in Bias Resistors

Key Attributes
Model Number: DTC023JEBTL
Product Custom Attributes
Output Voltage(VO(on)):
150mV@5mA,0.5mA
Input Resistor:
2.86kΩ
Resistor Ratio:
26
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC023JEBTL
Package:
SOT-416
Product Description

Product Overview

The ROHM DTC023J series are NPN digital transistors featuring built-in biasing resistors (R1 = 2.2k, R2 = 47k). This integration simplifies circuit design by eliminating the need for external input resistors, allowing for straightforward configuration of inverter circuits. Designed for ease of use, these transistors only require the setting of on/off conditions for operation. They are suitable for applications such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA023J series.

Product Attributes

  • Brand: ROHM
  • Product Type: Digital Transistor (Bias Resistor Built-in Transistor)
  • RoHS Compliant: Yes

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking Power Dissipation (mW)
DTC023JM SOT-723 (VMT3) 1212 T2L 180 8 8000 46 150
DTC023JEB SOT-416FL (EMT3F) 1616 TL 180 8 3000 46 150
DTC023JUB SOT-323FL (UMT3F) 2021 TL 180 8 3000 46 200
Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta = 25C)
Supply voltage VCC 50 V
Input voltage VIN -5 12 V
Output current IO 100 mA
Collector current IC(MAX)*1 100 mA
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C)
Input voltage (OFF) VI(off) VCC = 5V, IO = 100A - - 0.5 V
Input voltage (ON) VI(on) VO = 0.3V, IO = 5mA 1.1 - - V
Output voltage (ON) VO(on) IO = 5mA, II = 0.5mA - 50 150 mV
Input current II VI = 5V - - 3.6 mA
Output current (OFF) IO(off) VCC = 50V, VI = 0V - - 500 nA
DC current gain GI VO = 10V, IO = 5mA 80 - - -
Input resistance R1 - 1.54 2.86 k
Resistance ratio R2/R1 - 17 26 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land.


2201242200_ROHM-DTC023JEBTL_C426508.pdf

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