Silicon Planar Zener Diodes Featuring Shikues BZT52B4V3 with Wide Voltage Range and Surface Mount Package
Key Attributes
Model Number:
BZT52B4V3
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Reverse Leakage Current (Ir):
5uA@1V
Pd - Power Dissipation:
500mW
Impedance(Zzt):
130Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4.21V~4.39V
Zener Voltage(Nom):
4.3V
Mfr. Part #:
BZT52B4V3
Package:
SOD-123
Product Description
Silicon Planar Zener Diodes
Silicon planar zener diodes offering a wide zener reverse voltage range from 2.0V to 75V. These diodes are housed in a small plastic package suitable for surface-mounted designs, with a total power dissipation of up to 500mW. They are ideal for applications requiring precise voltage regulation.
Product Attributes
- Brand: BZT52B (implied by part numbers)
- Package Type: SOD-123
- Tolerance: Approximately 2%
Technical Specifications
| Type | Zener Voltage Range (V) Min | Zener Voltage Range (V) Nom | Zener Voltage Range (V) Max | Zener Voltage (V) @ IZT | ZT Dynamic Impedance Max () @ IZT | Reverse Current Max (A) @ VR | Power Dissipation (mW) | Forward Voltage (V) @ IF=10mA | Thermal Resistance (C/W) |
| BZT52B2V0 THRU BZT52B75 | 2.0 | - | 75 | - | - | - | 500 | 0.9 | 340 |
| BZT52B2V4 | 1.96 | 2.16 | 2.04 | 2.0 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B2V7 | 2.16 | 2.35 | 2.24 | 2.2 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B3V0 | 2.35 | 2.65 | 2.45 | 2.4 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B3V3 | 2.65 | 3.06 | 2.75 | 2.7 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B3V6 | 2.94 | 3.37 | 3.06 | 3.0 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B3V9 | 3.23 | 3.67 | 3.37 | 3.3 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B4V3 | 3.53 | 3.98 | 3.67 | 3.6 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B4V7 | 3.82 | 4.39 | 3.98 | 3.9 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B5V1 | 4.21 | 4.79 | 4.39 | 4.3 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B5V6 | 4.61 | 5.20 | 4.79 | 4.7 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B6V2 | 5.00 | 5.49 | 5.20 | 5.1 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B6V8 | 5.49 | 6.08 | 5.71 | 5.6 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B7V5 | 6.08 | 6.66 | 6.32 | 6.2 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B8V2 | 6.66 | 7.35 | 6.94 | 6.8 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B9V1 | 7.35 | 8.04 | 7.65 | 7.5 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B10 | 8.04 | 8.92 | 8.36 | 8.2 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B11 | 8.92 | 9.80 | 9.28 | 9.1 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B12 | 9.80 | 10.78 | 10.20 | 10 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B13 | 10.78 | 11.76 | 11.22 | 11 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B15 | 11.76 | 12.74 | 12.24 | 12 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B16 | 12.74 | 14.70 | 13.26 | 13 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B18 | 14.70 | 15.68 | 15.30 | 15 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B20 | 15.68 | 17.64 | 16.32 | 16 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B22 | 17.64 | 19.60 | 18.36 | 18 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B24 | 19.60 | 21.56 | 20.40 | 20 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B27 | 21.56 | 23.52 | 22.44 | 22 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B30 | 23.52 | 26.46 | 24.48 | 24 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B33 | 26.46 | 29.40 | 27.54 | 27 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B36 | 29.40 | 32.34 | 30.60 | 30 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B39 | 32.34 | 35.28 | 33.66 | 33 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B43 | 35.28 | 38.22 | 36.72 | 36 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B47 | 38.22 | 42.14 | 39.78 | 39 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B51 | 42.14 | 46.06 | 43.86 | 43 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B56 | 46.06 | 49.98 | 47.94 | 47 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B62 | 49.98 | 54.88 | 52.02 | 51 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B68 | 54.88 | 60.76 | 57.12 | 56 | 120 | 2 | 500 | 0.9 | 340 |
| BZT52B75 | 60.76 | 66.64 | 63.24 | 62 | 120 | 2 | 500 | 0.9 | 340 |
2510281852_Shikues-BZT52B4V3_C5356486.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
