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quality Inverter and driver application PNP transistor ROHM DTA114TU3T106 with built in bias resistors included factory
quality Inverter and driver application PNP transistor ROHM DTA114TU3T106 with built in bias resistors included factory

Inverter and driver application PNP transistor ROHM DTA114TU3T106 with built in bias resistors included

Key Attributes
Model Number: DTA114TU3T106
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
10kΩ
Number:
1 PNP Pre-Biased
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA114TU3T106
Package:
SOT-323
Product Description

Product Overview

The DTA114T series is a PNP digital transistor featuring built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. This design enables straightforward inverter circuit configuration, requiring only the setting of on/off conditions for operation. Ideal for inverter, interface, and driver applications, these transistors offer complementary NPN types for versatile circuit solutions.

Product Attributes

  • Brand: ROHM

Technical Specifications

Model Package Package Size (mm) Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
DTA114TM SOT-723 1212 T2L 180 8 3000 94
DTA114TEB SOT-416FL 1616 TL 180 8 3000 94
DTA114TE SOT-416 1616 TL 180 8 3000 94
DTA114TUB SOT-323FL 2021 TL 180 8 3000 94
DTA114TU3 SOT-323 2021 T106 180 8 3000 94
DTA114TKA SOT-346 2928 T146 180 8 3000 94
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC -100 mA
Power dissipation (DTA114TM, DTA114TEB, DTA114TE) PD*1 (Ta = 25C) 150 mW
Power dissipation (DTA114TUB, DTA114TU3) PD*1 (Ta = 25C) 200 mW
Power dissipation (DTA114TKA) PD*1 (Ta = 25C) 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Collector-base breakdown voltage BVCBO IC = -50A -50 V
Collector-emitter breakdown voltage BVCEO IC = -1mA -50 V
Emitter-base breakdown voltage BVEBO IE = -50A -5 V
Collector cut-off current ICBO VCB = -50V -500 nA
Emitter cut-off current IEBO VEB = -4V -500 nA
Collector-emitter saturation voltage VCE(sat) IC = -10mA, IB = -1mA -300 mV
DC current gain hFE VCE = -5V, IC = -1mA 100 250 600 -
Input resistance R1 7 10 13 k
Transition frequency fT*2 VCE = -10V, IE = 5mA, f = 100MHz 250 MHz

*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor


2210111600_ROHM-DTA114TU3T106_C3588942.pdf

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