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quality NPN Silicon Transistor Siliup MMBT3904T2 with Compact SOT23 Package and 0.2A Collector Current factory
quality NPN Silicon Transistor Siliup MMBT3904T2 with Compact SOT23 Package and 0.2A Collector Current factory

NPN Silicon Transistor Siliup MMBT3904T2 with Compact SOT23 Package and 0.2A Collector Current

Key Attributes
Model Number: MMBT3904T2
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
-
Type:
-
Transition Frequency(fT):
300MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904T2
Package:
SOT-23
Product Description

Product Overview

The MMBT3904T2 is a general-purpose NPN silicon transistor designed for switching applications. It offers a collector-emitter voltage of 40V and a collector current of 0.2A, making it suitable for various electronic circuits. This transistor comes in a compact SOT-23 package.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Type: General Purpose Transistor
  • Material: Silicon
  • Polarity: NPN
  • Marking: MMBT3904T2

Technical Specifications

Parameter Symbol Test Condition Min Max Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Collector Emitter Voltage VCEO 40 V
Collector Base Voltage VCBO 60 V
Emitter Base Voltage VEBO 6 V
Collector Current IC 200 mA
Power Dissipation Ptot 100 mW
Thermal Resistance from Junction to Ambient RJA 1250 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Collector-emitter breakdown voltage BVCEO IC=1mA , IB=0 40 V
Collector-base breakdown voltage BVCBO IC=10A ,IE=0 60 V
Emitter-base breakdown voltage BVEBO IE=10A,IC=0 6 V
Collector cut-off current ICEX VCE=30V,VEB(off)=3V 50 nA
Emitter cut-off current IEBO VEB=5V,IC=0 100 nA
DC current gain hFE VCE=1V,IC=0.1mA 40
VCE=1V,IC=1mA 70
VCE=1V,IC=10mA 100 300
VCE=1V,IC=50mA 60
Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.2 V
IC=50mA,IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 0.65 0.85 V
IC=50mA,IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHZ
Package Information: SOT-23
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e 0.95 REF.
e1 1.80 2.00
L 0.55 REF.
L1 0.30 0.50
0o 8o

2411212332_Siliup-MMBT3904T2_C41355104.pdf

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