40V N Channel Power MOSFET Siliup SP40N02GNK with Low Gate Charge and High Continuous Current

Key Attributes
Model Number: SP40N02GNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9mΩ@10V;2.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
1.88nF
Input Capacitance(Ciss):
3.2nF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
SP40N02GNK
Package:
PDFNWB-8L(5x6)
Product Description

Product Overview

The SP40N02GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching speed, low Gate Charge, and low Rdson, enabled by advanced Split Gate Trench Technology. It is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N02GNK
  • Device Code: 40N02G
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 40 V
RDS(on) Typ @10V 1.9 m
RDS(on) Typ @4.5V 2.7 m
Continuous Drain Current ID 120 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25) 40 V
Gate-Source Voltage VGSS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25C) 120 A
Continuous Drain Current ID (Tc=100C) 80 A
Pulse Drain Current IDM (Tested) 480 A
Single pulsed avalanche energy EAS 529 mJ
Power Dissipation PD (Tc=25C) 100 W
Thermal Resistance Junction-to-Case RJC 1.25 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =30A - 1.9 2.4 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =20A - 2.7 3.6 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 3200 - pF
Output Capacitance Coss - 1880 - pF
Reverse Transfer Capacitance Crss - 65 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=30A - 54 - nC
Gate-Source Charge Qgs - 9.5 -
Gate-Drain Charge Qg d - 11 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20 VGS=10V , RG=1.6, ID=65A - 9.5 - nS
Rise Time Tr - 3 -
Turn-Off Delay Time Td(off) - 33 -
Fall Time Tf - 4 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 120 A
Reverse recovery time Trr IS=40A, di/dt=100A/us, Tj=25 - 46 - nS
Reverse recovery charge Qrr - 85 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP40N02GNK_C22385417.pdf

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