Low switching loss diode ROHM RF071M2STR featuring silicon epitaxial planar design for rectification
Key Attributes
Model Number:
RF071M2STR
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
15A
Reverse Leakage Current (Ir):
10nA@200V
Reverse Recovery Time (trr):
12ns
Operating Junction Temperature Range:
-
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
780mV@700mA
Current - Rectified:
700mA
Mfr. Part #:
RF071M2STR
Package:
SOD-123F
Product Description
ROHM RF071M2S Super Fast Recovery Diode
The ROHM RF071M2S is a super fast recovery diode series designed for general rectification applications. It features ultra-low forward voltage and low switching loss, making it suitable for applications requiring efficient power conversion. The diode is constructed using a silicon epitaxial planar type process.
Product Attributes
- Brand: ROHM
- Series: RF071M
- Construction: Silicon epitaxial planar type
- Manufacture Code: PMDU
- JEITA Code: SOD-123
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Repetitive peak reverse voltage | VRM | 200 | V | ||
| Reverse voltage | VR | 200 | V | ||
| Direct forward current | IF | 1 | A | ||
| Average rectified forward current | Io | 0.7 | A | ||
| Non-repetitive forward surge current | IFSM | 60Hz half sin wave ,Non-repetitive at Tj=25C | 20 | A | |
| Operating junction temperature | Tj | -55 | +150 | C | |
| Storage temperature | Tstg | -55 | +150 | C | |
| Forward voltage | VF | IF=0.5A | 0.85 | V | |
| Reverse current | IR | VR=200V | 10 | µA | |
| Reverse recovery time | trr | IF=0.5A, IR=1A, Irr=0.25×IR | 12 | 25 | ns |
| Thermal resistance | Rth(j-l) | Junction to lead | 20 | °C / W | |
| Capacitance between terminals | Ct | f = 1MHz, Ta = 25°C, VR = 0V | 10 | pF |
1809192227_ROHM-RF071M2STR_C84978.pdf
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