power switching device Siliup SP20P08P8 P channel mosfet with low Rdson and fast switching features

Key Attributes
Model Number: SP20P08P8
Product Custom Attributes
Pd - Power Dissipation:
1.5W
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@4.5V;9mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
459pF
Number:
1 P-Channel
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
4.6nF
Gate Charge(Qg):
46nC@4.5V
Mfr. Part #:
SP20P08P8
Package:
SOP-8L
Product Description

Product Overview

The SP20P08P8 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup
  • Technology: Siliup Semiconductor Technology
  • Product Line: P-Channel MOSFET
  • Marking: 20P08

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
Static Drain-Source On-Resistance RDS(on) -4.5V @ -10A 7.5 9 m
Static Drain-Source On-Resistance RDS(on) -2.5V @ -8A 9 12 m
Continuous Drain Current ID -18 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) -20 V
Gate-Source Voltage VGS (Ta=25) 8 V
Continuous Drain Current ID (Ta=25) -18 A
Pulsed Drain Current IDM (Ta=25) -72 A
Power Dissipation PD (Ta=25) 1.5 W
Thermal Resistance Junction-to-Ambient RJA (Ta=25) 83 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=8V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -0.5 -0.65 -1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-10A 7.5 9 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-8A 9 12 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-10V , VGS=0V , f=1MHz 4600 pF
Output Capacitance Coss VDS=-10V , VGS=0V , f=1MHz 460 pF
Reverse Transfer Capacitance Crss VDS=-10V , VGS=0V , f=1MHz 459 pF
Total Gate Charge Qg VDS=-10V , VGS=-4.5V , ID=-5A 46 nC
Gate-Source Charge Qgs VDS=-10V , VGS=-4.5V , ID=-5A 7.3 nC
Gate-Drain Charge Qg d VDS=-10V , VGS=-4.5V , ID=-5A 10 nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-10V, VGS=-10V ,RG=3, ID=-5A 8 nS
Rise Time Tr VDD=-10V, VGS=-10V ,RG=3, ID=-5A 59 nS
Turn-Off Delay Time Td(off) VDD=-10V, VGS=-10V ,RG=3, ID=-5A 111 nS
Fall Time Tf VDD=-10V, VGS=-10V ,RG=3, ID=-5A 43 nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A -1.2 V
Maximum Body-Diode Continuous Current IS -8 A
Reverse Recovery Time Trr IS=-5A, di/dt=100A/us, Tj=25 24 nS
Reverse Recovery Charge Qrr IS=-5A, di/dt=100A/us, Tj=25 13 nC
Package Information
Device Code 20P08
Package Type SOP-8L
Order Information SP20P08P8
Unit/Tape 4000
SOP-8L Package Dimensions (Millimeters)
Symbol Dimensions Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
0 8

2504101957_Siliup-SP20P08P8_C41355003.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.