power switching device Siliup SP20P08P8 P channel mosfet with low Rdson and fast switching features
Product Overview
The SP20P08P8 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup
- Technology: Siliup Semiconductor Technology
- Product Line: P-Channel MOSFET
- Marking: 20P08
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -4.5V @ -10A | 7.5 | 9 | m | |
| Static Drain-Source On-Resistance | RDS(on) | -2.5V @ -8A | 9 | 12 | m | |
| Continuous Drain Current | ID | -18 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -20 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 8 | V | ||
| Continuous Drain Current | ID | (Ta=25) | -18 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | -72 | A | ||
| Power Dissipation | PD | (Ta=25) | 1.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 83 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=8V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -0.5 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-10A | 7.5 | 9 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-8A | 9 | 12 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 4600 | pF | ||
| Output Capacitance | Coss | VDS=-10V , VGS=0V , f=1MHz | 460 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-10V , VGS=0V , f=1MHz | 459 | pF | ||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-5A | 46 | nC | ||
| Gate-Source Charge | Qgs | VDS=-10V , VGS=-4.5V , ID=-5A | 7.3 | nC | ||
| Gate-Drain Charge | Qg d | VDS=-10V , VGS=-4.5V , ID=-5A | 10 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-10V, VGS=-10V ,RG=3, ID=-5A | 8 | nS | ||
| Rise Time | Tr | VDD=-10V, VGS=-10V ,RG=3, ID=-5A | 59 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=-10V, VGS=-10V ,RG=3, ID=-5A | 111 | nS | ||
| Fall Time | Tf | VDD=-10V, VGS=-10V ,RG=3, ID=-5A | 43 | nS | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -8 | A | |||
| Reverse Recovery Time | Trr | IS=-5A, di/dt=100A/us, Tj=25 | 24 | nS | ||
| Reverse Recovery Charge | Qrr | IS=-5A, di/dt=100A/us, Tj=25 | 13 | nC | ||
| Package Information | ||||||
| Device Code | 20P08 | |||||
| Package Type | SOP-8L | |||||
| Order Information | SP20P08P8 | |||||
| Unit/Tape | 4000 | |||||
| SOP-8L Package Dimensions (Millimeters) | ||||||
| Symbol | Dimensions | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP20P08P8_C41355003.pdf
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