Power Switching MOSFET SP015N16GHTH 150V N Channel with Low RDSon and Fast Switching in TO 252 Package
Key Attributes
Model Number:
SP015N16GHTH
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
153pF
Input Capacitance(Ciss):
1.869nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
SP015N16GHTH
Package:
TO-252
Product Description
Product Overview
The SP015N16GHTH is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, DC-DC converters, and power management systems. It is available in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N16GHTH
- N-Channel Power MOSFET
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 150 | V | ||||
| RDS(on) | @10V | 16 | m | |||
| ID | 45 | A | ||||
| Features | ||||||
| Fast Switching | ||||||
| Low Gate Charge and Rdson | ||||||
| Advanced Split Gate Trench Technology | ||||||
| 100% Single Pulse Avalanche Energy Test | ||||||
| Applications | ||||||
| Power switching application | ||||||
| DC-DC Converter | ||||||
| Power Management | ||||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 45 | A | |||
| Continuous Drain Current (Tc=100) | ID | 30 | A | |||
| Pulsed Drain Current | IDM | 180 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 225 | mJ | |||
| Power Dissipation (Tc=25) | PD | 120 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.04 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Static Characteristics | (Ta=25, unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 16 | 20 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 1869 | - | pF |
| Output Capacitance | Coss | - | 153 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 25 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | ||
| Gate-Drain Charge | Qg d | - | 4 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 20A, RG = 6 | - | 13 | - | nS |
| Rise Time | tr | - | 5 | - | ||
| Turn-Off Delay Time | td(off) | - | 21 | - | ||
| Fall Time | tf | - | 5 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 45 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 70 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 156 | - | nC | |
| Order Information | ||||||
| Device | Package | Unit/Tube | ||||
| SP015N16GHTH | TO-252 | 2500 | ||||
| Marking | 015N16GH : Product code | ** : Week code | ||||
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 - 2.400 | 0.087 - 0.094 | ||||
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | ||||
| b | 0.660 - 0.860 | 0.026 - 0.034 | ||||
| c | 0.460 - 0.580 | 0.018 - 0.023 | ||||
| D | 6.500 - 6.700 | 0.256 - 0.264 | ||||
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | ||||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 - 6.200 | 0.236 - 0.244 | ||||
| e | 2.186 - 2.386 | 0.086 - 0.094 | ||||
| L | 9.800 - 10.400 | 0.386 - 0.409 | ||||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | ||||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | ||||
| 1.100 - 1.300 | 0.043 - 0.051 | |||||
| 0 - 8 | 0 - 8 | |||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP015N16GHTH_C42372350.pdf
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