Power Management Solutions Featuring Siliup SP30P06NJ 30V P Channel MOSFET with Fast Switching Speed
Key Attributes
Model Number:
SP30P06NJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
42A
RDS(on):
6mΩ@10V;9mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
335pF
Number:
1 P-Channel
Output Capacitance(Coss):
387pF
Input Capacitance(Ciss):
3.456nF
Pd - Power Dissipation:
37W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
SP30P06NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP30P06NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching speed, low On-Resistance, and 100% Single Pulse avalanche energy testing. It is designed for applications such as DC-DC Converters and Power Management, utilizing the PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P06NJ
- Package: PDFN3X3-8L
- Device Code: 30P06
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | -10V | 6 | 9 | m | ||
| -4.5V | 9 | m | ||||
| Continuous Drain Current | ID | -42 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25,unless otherwise noted) | -30 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -42 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -28 | A | |||
| Pulse Drain Current Tested | IDM | -168 | A | |||
| Single Pulse Avalanche Energy | EAS | 125 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 37 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.4 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-15A | 6 | 9 | m | |
| VGS=-4.5V , ID=-10A | 9 | 13 | m | |||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 3456 | pF | ||
| Output Capacitance | Coss | 387 | pF | |||
| Reverse Transfer Capacitance | Crss | 335 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-20A | 62 | nC | ||
| Gate-Source Charge | Qgs | 12 | nC | |||
| Gate-Drain Charge | Qgd | 14 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V ,VGS=-10V , RG=3, ID=-20A | 15 | nS | ||
| Rise Time | Tr | 61 | nS | |||
| Turn-Off Delay Time | Td(off) | 54 | nS | |||
| Fall Time | Tf | 65 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -42 | A | |||
| Reverse recover time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 25 | nS | ||
| Reverse recovery charge | Qrr | 12 | nC | |||
| Package Dimensions (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0 ~ 0.05 | 0 ~ 0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0 ~ 0.100 | 0 ~ 0.004 | ||||
| L3 | 0 ~ 0.100 | 0 ~ 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
2504101957_Siliup-SP30P06NJ_C41355010.pdf
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