Lead free complementary MOSFET Siliup SP4012CP8 40V surface mount device designed for battery protection
Key Attributes
Model Number:
SP4012CP8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
9A;7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V;26mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF;102pF
Number:
-
Input Capacitance(Ciss):
1.061nF;1.415nF
Output Capacitance(Coss):
110pF;134pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
25nC@4.5V;23.5nC@4.5V
Mfr. Part #:
SP4012CP8
Package:
SOP-8
Product Description
Product Overview
The SP4012CP8 is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is ideal for battery protection, load switching, and power management applications. It features 100% single-pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Complementary MOSFET
- Lead Free: Yes
- Package Type: SOP-8L
- Device Code: 4012
Technical Specifications
| Parameter | Symbol | Conditions | N-Channel (Typ.) | P-Channel (Typ.) | Units |
|---|---|---|---|---|---|
| Product Summary | |||||
| Drain-Source Voltage | V(BR)DSS | 40 | -40 | V | |
| On-Resistance | RDS(on) | @10V | 13 | - | m |
| On-Resistance | RDS(on) | @4.5V | 18 | - | m |
| Continuous Drain Current | ID | 9 | -7 | A | |
| On-Resistance | RDS(on) | @-10V | - | 26 | m |
| On-Resistance | RDS(on) | @-4.5V | - | 35 | m |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||||
| Drain-Source Voltage | VDS | 40 | -40 | V | |
| Gate-Source Voltage | VGS | 20 | 20 | V | |
| Continuous Drain Current | ID | 9 | -7 | A | |
| Pulsed Drain Current | IDM | 36 | -28 | A | |
| Single Pulse Avalanche Energy | EAS | 18 | 36 | mJ | |
| Power Dissipation | PD | 2.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | 50 | /W | ||
| Storage Temperature Range | TSTG | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.5 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=7A | 13 - 18 | - | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 1061 | - | pF |
| Output Capacitance | Coss | 110 | - | pF | |
| Reverse Transfer Capacitance | Crss | 95 | - | pF | |
| Total Gate Charge | Qg | VDS=32V , VGS=4.5V , ID=7A | 25 | - | nC |
| Gate-Source Charge | Qgs | 6.3 | - | nC | |
| Gate-Drain Charge | Qgd | 4.6 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V , RG=3, ID=7A | 7.8 | - | nS |
| Rise Time | Tr | 10.7 | - | nS | |
| Turn-Off Delay Time | Td(off) | 25.8 | - | nS | |
| Fall Time | Tf | 4.6 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | 9 | A | |
| Reverse Recovery Time | Trr | IS=6A, di/dt=100A/us, TJ=25 | - | 15 | nS |
| Reverse Recovery Charge | Qrr | - | 5 | nC | |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | - | -40 | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | - | -1 to -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | - | 26 - 35 | m |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1415 | pF |
| Output Capacitance | Coss | - | 134 | pF | |
| Reverse Transfer Capacitance | Crss | - | 102 | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-1A | - | 23.5 | nC |
| Gate-Source Charge | Qgs | - | 3.4 | nC | |
| Gate-Drain Charge | Qgd | - | 4.3 | nC | |
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-1A | - | 11 | nS |
| Rise Time | Tr | - | 16.7 | nS | |
| Turn-Off Delay Time | Td(off) | - | 35 | nS | |
| Fall Time | Tf | - | 19 | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | -7 | A | |
| Reverse Recovery Time | Trr | IS=-6A, di/dt=-100A/us, TJ=25 | - | 23 | nS |
| Reverse Recovery Charge | Qrr | - | 13 | nC | |
| Package Information (SOP-8L) | |||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | |||
| A | 1.35 | 1.75 | |||
| A1 | 0.10 | 0.25 | |||
| A2 | 1.35 | 1.55 | |||
| b | 0.33 | 0.51 | |||
| c | 0.17 | 0.25 | |||
| D | 4.80 | 5.00 | |||
| e | 1.27 REF. | ||||
| E | 5.80 | 6.20 | |||
| E1 | 3.80 | 4.00 | |||
| L | 0.40 | 1.27 | |||
| 0 | 8 | ||||
2504101957_Siliup-SP4012CP8_C22385406.pdf
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