Siliup SP25N50TF 500V N Channel Planar MOSFET Optimized for DC DC Converters and Switching Circuits
Key Attributes
Model Number:
SP25N50TF
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
25A
RDS(on):
210mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
217pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
3.468nF
Gate Charge(Qg):
63nC@10V
Mfr. Part #:
SP25N50TF
Package:
TO-247
Product Description
Product Overview
The SP25N50TF is a 500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it ideal for DC-DC converters and high-frequency switching applications, including synchronous rectification. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP25N50TF
- Technology: N-Channel Planar MOSFET
- Package: TO-247
- Marking: 25N50 (Device Code)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 500 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 25 | A | |||
| Continuous Drain Current (Tc=100) | ID | 16.6 | A | |||
| Pulsed Drain Current | IDM | 100 | A | |||
| Single Pulse Avalanche Energy | EAS | 1620 | mJ | |||
| Power Dissipation (Tc=25) | PD | 300 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 500 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 400V, VGS = 0V | - | - | 1 | µA |
| Gate Leakage Current | IGSS | VGS = ±30V, VDS = 0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 12A | - | 0.21 | 0.26 | Ω |
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | - | 3468 | - | pF |
| Output Capacitance | Coss | - | 217 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 12 | - | pF | |
| Total Gate Charge | Qg | VDS=400V , VGS=10V , ID=20A | - | 63 | - | nC |
| Gate-Source Charge | Qgs | - | 16 | - | ||
| Gate-Drain Charge | Qgd | - | 24 | - | ||
| Turn-On Delay Time | td(on) | VGS = 250V, VDS =10V, RG=25Ω, ID=12A | - | 37 | - | nS |
| Rise Time | tr | - | 64 | - | ||
| Turn-Off Delay Time | td(off) | - | 86 | - | ||
| Fall Time | tf | - | 46 | - | ||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 25 | A | |
| Body Diode Reverse Recovery Time | Trr | IS = 25A, dIF/dt = 100A/us | - | 495 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 6250 | - | nC |
Package Information (TO-247)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| Φ | 7.100 | 7.300 | 0.280 | 0.287 |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H1 | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
Order Information
| Device | Package | Unit/Tube |
|---|---|---|
| SP25N50TF | TO-247 | 30 |
2504101957_Siliup-SP25N50TF_C41398771.pdf
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