1200V SiC MOSFET SP50N120CTK Low Capacitance High Blocking Voltage Device for Photovoltaic Inverters
Key Attributes
Model Number:
SP50N120CTK
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
74A
Operating Temperature -:
-55℃~+175℃
RDS(on):
35mΩ@18V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Input Capacitance(Ciss):
2.975nF
Output Capacitance(Coss):
119pF
Pd - Power Dissipation:
312W
Gate Charge(Qg):
117nC
Mfr. Part #:
SP50N120CTK
Package:
TO-247-4L
Product Description
Product Overview
The SP50N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances and high blocking voltage combined with low RDS(on). It is designed for ease of paralleling and simple driving, making it suitable for demanding applications such as Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, and High Voltage DC/DC Converters. The SP50N120CTK is RoHS compliant.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Compliance: RoHS Compliant
- Package: TO-247-4L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 1200 | V | |||
| RDS(on)TYP | RDS(on) | @18V | 35 | m | ||
| ID | ID | 50 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 1200 | V | ||
| Gate-Source Voltage | VGSMAX | -8 | +22 | V | ||
| Recommended Gate-Source Voltage | VGSop | -4 | +18 | V | ||
| Continuous Drain Current (Tc=25) | ID | 74 | A | |||
| Continuous Drain Current (Tc=100) | ID | 50 | A | |||
| Pulsed Drain Current | IDM | 150 | A | |||
| Single Pulse Avalanche Energy | EAS | 1805 | mJ | |||
| Power Dissipation (Tc=25) | PD | 312 | W | |||
| Power Dissipation (Tc=100) | PD | 156 | W | |||
| Thermal Resistance Junction-Case | RJC | 0.51 | /W | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 1200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | - | 1 | 100 | uA |
| Gate-Source Leakage Current | IGSS | VGS=18V, VDS=0V, TJ=25 | - | 1 | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=5mA, Tj=25 | 2.0 | 2.5 | 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=5mA, Tj=175 | - | 1.8 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=20A, Tj=25 | - | 35 | 45 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=20A, Tj=175 | - | 69 | - | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=1000V, VGS=0V, f=100KHz | - | 2975 | - | pF |
| Output Capacitance | Coss | - | 119 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 12 | - | pF | |
| Total Gate Charge | Qg | VDS=800V, VGS= -4/+18V, ID=40A | - | 117 | - | nC |
| Gate-Source Charge | Qgs | - | 38 | - | nC | |
| Gate-Drain Charge | Qgd | - | 27 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDS=800V, VGS= -4/+18V, ID=40A, RG=4.5 | - | 18 | - | ns |
| Rise Time | Tr | - | 21 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | ns | |
| Fall Time | Tf | - | 9 | - | ns | |
| Turn-On Energy | Eon | - | 485 | - | J | |
| Turn-Off Energy | Eoff | - | 75 | - | J | |
| Total Switching Loss | Etot | - | 253 | - | J | |
| Reverse Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=-4V, ISD=20A, TJ=25 | - | 5 | - | V |
| Diode Forward Voltage | VSD | VGS=-4V, ISD=20A, TJ=175 | - | 4.4 | - | V |
| Continuous Diode Forward Current | IS | VGS=-4V, Tc=25C | - | 45 | - | A |
| Continuous Diode Forward Current | IS | VGS=-4V, Tc=100C | - | 25 | - | A |
| Reverse Recovery Time | trr | VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/s | - | 19 | - | ns |
| Reverse Recovery Charge | Qrr | - | 500 | - | nC | |
| Peak Reverse Recovery Current | Irrm | - | 50 | - | A | |
| Package Information (TO-247-4L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.83 | 5.21 | 0.19 | 0.21 | ||
| A1 | 2.29 | 2.54 | 0.09 | 0.10 | ||
| A2 | 1.91 | 2.16 | 0.08 | 0.09 | ||
| b1 | 2.39 | 2.94 | 0.09 | 0.12 | ||
| b3 | 1.07 | 1.60 | 0.04 | 0.06 | ||
| b5 | 2.39 | 2.69 | 0.09 | 0.11 | ||
| c | 0.55 | 0.68 | 0.02 | 0.03 | ||
| D | 23.30 | 23.60 | 0.92 | 0.93 | ||
| D1 | 16.25 | 17.65 | 0.64 | 0.69 | ||
| D2 | 0.95 | 1.25 | 0.04 | 0.05 | ||
| E | 15.75 | 16.13 | 0.62 | 0.64 | ||
| E1 | 13.10 | 14.15 | 0.52 | 0.56 | ||
| E2 | 3.68 | 5.10 | 0.14 | 0.20 | ||
| E3 | 1.00 | 1.90 | 0.04 | 0.07 | ||
| E4 | 12.38 | 13.43 | 0.49 | 0.53 | ||
| e | 2.54 BSC | 0.1 BSC | ||||
| e1 | 5.08 BSC | 0.2 BSC | ||||
| L | 17.31 | 17.82 | 0.68 | 0.70 | ||
| L1 | 3.97 | 4.37 | 0.16 | 0.17 | ||
| L2 | 2.35 | 2.65 | 0.09 | 0.10 | ||
| P | 3.51 | 3.65 | 0.14 | 0.14 | ||
| Q | 5.49 | 6.00 | 0.22 | 0.24 | ||
| S | 6.04 | 6.30 | 0.24 | 0.25 | ||
| T | 17.5 REF. | 0.69 REF. | ||||
| W | 3.5 REF. | 0.14 REF. | ||||
| X | 4.0 REF. | 0.16 REF. | ||||
2504101957_Siliup-SP50N120CTK_C22466829.pdf
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